Other papers

• Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)
S. Personnic, K. K. Bourdelle, F. Letertre, A. Tauzin, N. Cherkashin, A. Claverie, R. Fortunier and H. Klocker, J. Appl. Phys. 103, 023508 (Jan. 2008).

• Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes
Hao-Chih Yuan, Michelle M. Kelly (Roberts), Donald E. Savage, Max G. Lagally, George K. Celler, and Zhenqiang Ma, IEEE Transactions on Electron Devices, Vol. 55, No. 3, March 2008.

• Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates
T. Signamarcheix, F. Allibert, F. Letertre, T. Chevolleau, L. Sanchez, E. Augendre, C. Deguet, H. Moriceau, L. Clavelier, and F. Rieutord, Appl. Phys. Lett. 93, 022109 (July 2008), DOI:10.1063/1.296034

• High Immunity to Threshold Voltage Variability in Undoped Ultra-Thin FDSOI MOSFETs and its Physical Understanding
O. Weber, O. Faynot, F. Andrieu, C. Buj-Dufournet, F. Allain, P. Scheiblin, J. Foucher, N. Daval, D. Lafond, L. Tosti, L. Brevard, O. Rozeau, C. Fenouillet-Beranger, M. Marin, F. Boeuf, D. Delprat, K. Bourdelle, B.-Y. Nguyen, and S. Deleonibus, IEDM 2008.

• Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy
Xing Wu, Junichi Uchikoshi, Takaaki Hirokane, Ryuta Yamada, Akihiro Takeuchi, Kenta Arima, and Mizuho Morita (Osaka University, Xi’an Jiaotong University) J. Electrochem. Soc., Volume 155, Issue 11, pp. H864-H868 (2008). Revised 17 July 2008; published 9 September 2008.

• Novel Silicon-Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM Photodetectors
Kah-Wee Ang, Shi-Yang Zhu, Jian Wang, Khai-Tze Chua, Ming-Bin Yu, Guo-Qiang Lo, Dim-Lee Kwong (Inst. of Microelectron, A*STAR, Singapore) Electron Device Letters, IEEE Publication Date: July 2008 Volume: 29, Issue: 7 page(s): 704-707.

• A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate Operation
Bawedin, M.; Cristoloveanu, S.; Flandre, D. (U. Cambridge, IMEP-INP, U. Catholique de Louvain) July 2008, Volume: 29, Issue: 7.

• Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs
Bedell, S.W., Majumdar, A., Ott, J.A. Arnold, J., Fogel, K., Koester, S.J, Sadana, D.K. (IBM), Electron Device Letters, IEEE July 2008, Volume: 29, Issue: 7.

• Very High Efficiency 13.56 MHz RFID Input Stage Voltage Multipliers Based On Ultra Low Power MOS Diodes
Gosset, G.; Rue, B.; Flandre, D. (U. Catholique de Louvain), 2008 IEEE International RFID Conference on 16-17 April 2008.

• ULPFA: a new efficient design of a power aware full adder
Hassoune, I.I.; Flandre, D.D.; O’Connor, I.I.; Legat, J.J. -D. (U. Catholique de Louvain). Circuits and Systems I: Regular Papers, Circuits and Systems I: Regular Papers, IEEE Transactions on [Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on]Volume PP, Issue 99, Page(s):1 – 1.

• Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
Anuj Madan, Ganesh Samudra, and Yee-Chia Yeo (Georgia Tech, U. Singapore) J. Appl. Phys. 104, 084505 (2008); DOI:10.1063/1.3000481, 24 October 2008.

• Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration
G. Roelkens, L. Liu, D. Van Thourhout, R. Baets, R. Nötzel, F. Raineri, I. Sagnes, G. Beaudoin, and R. Raj (Ghent U.-IMEC, TU Eindhoven, CNRS). J. Appl. Phys. 104, 033117 (2008); DOI:10.1063/1.2967832, 15 August 2008.

Leave a Reply

Your email address will not be published. Required fields are marked *