216th Electrochemical Society Meeting (ECS)

4-9 October 2009 – Vienna, Austria

www.electrochem.org

Symposium E1 – Analytical Techniques for Semiconductor Materials and Process Characterization

http://www.electrochem.org/meetings/biannual/216/tp/reportTechProg_902_E1.html

  • #1952: New Approaches in Wet Chemical Etching for Defect Delineation in Silicon Substrates
    J. Maehliss, et al (Goethe U., Soitec, Institute for Inorganic and Analytical Chemistry)
  • #1953: Delineation of Crystal Defects with a Modified FS Cr-free Etching Solution on SOI Materials
    T. Sanetti, et al. (Goethe U.,  Institute for Inorganic and Analytical Chemistry)
  • #1955: Characterization of Structural Defects in Silicon and SOI Wafers by Means of Laser Scattering Tomography
    V. A. Monier, et al. (Microelectronic Materials Institute of Provence, Soitec, IM2NP)
  • #1964: Probing the Strain States in Nanopatterned Strained SOI
    O. Moutanabbir, et al. (Max Planck, Fraunhofer, Argonne)
  • #1986: New Approaches in Wet Chemical Etching for Defect Delineation in Silicon Substrates
    J. Maehliss, et al.  (Goethe U., Soitec, Institute for Inorganic and Analytical Chemistry
  • #1989: Drain Leakage Current Evaluation in the Diamond SOI nMOSFET at High Temperatures
    M. Bellodi and S. Gimenez (U. FEI)

Symposium E3 – Cleaning Technology in Semiconductor Device Manufacturing

http://www.electrochem.org/meetings/biannual/216/tp/reportTechProg_902_E3.html

  • #2060: Drying Impact on Semiconductor Surfaces after Innovative Solvent Exposure
    Y. Le Tiec, et al. (Leti, INAC, FSI, Soitec)

Symposium E10 – ULSI Process Integration

http://www.electrochem.org/meetings/biannual/216/tp/reportTechProg_902_E10.html

  • #2353: Ultrathin Body Effects in Single-Gate Multiple Gate SOI Transistors
    F. Gamiz, et al. (U. Granada)
  • #2355: Very High Performance CMOS on Si(551) Surface Using Radical Oxidation Silicon Flattening Technology and Accumulation-Mode SOI Device Structure
    W. Cheng, et al. (Tohoku U.)
  • #2387: Challenges and Progress in Germanium-on-Insulator Materials and Device Development Towards ULSI Integration
    E. Augendre, et al. (Leti, IMEP-INP, Soitec)

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