GSS has declared, “Metal-gate-first FD-SOI will be very good but metal-gate-last could be spectacular


Following investigations and simulations, GSS has declared, “Metal-gate-first FD-SOI will be very good but metal-gate-last could be spectacular.” “…the technologist who that could develop and deliver metal-gate-last FD-SOI at 28nm will be able to offer you supply voltage below 0.5V,” they explained. They also noted, “The statistical variability introduced by the random discrete dopants in the FD-SOI MOSFETs is significantly lower compared to bulk MOSFETs with equivalent dimensions.”

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