DARPA reports that a team of researchers at the University of Southern California and Columbia University has achieved output power levels of nearly 0.5W at 45 GHz with a 45nm SOI CMOS chip


Darpa RFPA SOI Columbia
(Image courtesy of DARPA and Columbia University)

DARPA reports that a team of researchers at the University of Southern California and Columbia University has achieved output power levels of nearly 0.5W at 45 GHz with a 45nm SOI CMOS chip. This world record result for CMOS-based power amplifiers doubles output power compared to the next best reported CMOS millimeter-wave power amplifier. The chip design used multiple stacked 45nm SOI CMOS devices for increased effective output voltage swing and efficient 8-way on-chip power-combining. Results will be reported at the 2013 Institute of Electrical and Electronics Engineers Radio Frequency Integrated Circuits Symposium. RF power amplifiers are used in communications and sensor systems for next-generation military microsystems in areas such as radar, guidance and high data rate communications to boost power levels for reliable transmission of signals over the distance required by the given application. These breakthroughs were achieved under the Efficient Linearized All-Silicon Transmitter ICs (ELASTx) program.

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