Dr. Jean-Pierre Colinge received the 2012 IEEE Andrew S. Grove award at the last ESSDERC-ESSCIRC Conference, for his “contributions to silicon-on-insulator devices and technology.”

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IEEE Division I Director, Cor Claeys (right) of imec, honoring Dr. Jean-Pierre Colinge (left) of TSMC for receiving  the 2012 Andrew S. Grove Award for his contributions to SOI. The presentation was made during the 2012 ESSDERC meeting in Bordeaux, France. (Photo Credit: Yann Deval, ESSDERC-ESSCIRC Conference Chair)
IEEE Division I Director, Cor Claeys (right) of imec, honoring Dr. Jean-Pierre Colinge (left) of TSMC for receiving
the 2012 Andrew S. Grove Award for his contributions to SOI. The presentation was made during the 2012 ESSDERC meeting in Bordeaux, France. (Photo Credit: Yann Deval, ESSDERC-ESSCIRC Conference Chair)

Dr. Jean-Pierre Colinge received the 2012 IEEE Andrew S. Grove award at the last ESSDERC-ESSCIRC Conference, for his “contributions to silicon-on-insulator devices and technology.” One of the industry’s most prestigious, the Grove Award is sponsored by the IEEE Electron Devices Society, recognizing “outstanding contributions to solid-state devices and technology.” As noted in the EDS Newsletter, Dr. Colinge’s “…strong actions and enthusiastic beliefs were crucial for supporting the development of SOI technology.” One of the giants of the SOI community, Dr. Colinge is especially heralded in the industry for his seminal and continued work in multigate FETS (aka MuGFETs, a category that includes architectures such as FinFET and TriGate among others). Dr. Colinge and his work have been featured in many editions of ASN. Previous Grove winners with strong ties to the advanced substrate community include Bijan Davari  (IBM, 2010) and Dimitri A. Antoniadis (IBM, 2002).

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