Industry’s first flexible FinFET uses SOI wafers


A team from King Abdullah University of Science and Technology (Saudi Arabia) has published an article in Advanced Materials (22 February 2014) entitled Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation. As subsequently described in an article in Nanowerk (article here), “…the team demonstrates a pragmatic approach to transforming silicon-on-insulator (SOI) based state-of-the-art FinFET into flexible and semi-transparent silicon-on-polymer FinFET while retaining high performance and integration density.” This marks the industry’s first FinFET layer transfer, team member Dr. Muhammad Mustafa Hussain told ASN.

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Reproduced with permission

An industry standard 8′′ SOI wafer based ultra‐thin (1 μm), ultra‐light‐weight, fully flexible and remarkably transparent state‐of‐the‐art non‐planar three dimensional (3D) FinFET is shown. It has sub‐20 nm features and the highest performance ever reported for a flexible transistor. (Courtesy: WILEY-VCH Verlag GmbH, Advanced Materials and King Abdullah University of Science and Technology. Reprinted with permission.)

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