Samsung Foundry Marketing Director Writes About Extending 28nm With FD-SOI

Post on :

Samsung’s Senior Director Foundry Marketing Kelvin Low blogged enthusiastically about the recent Samsung-STMicroelectronics FD-SOI announcement  on the company’s website. He has graciously agreed to let ASN repost it here – and says we’ll be hearing more from him in the future.

 

Without further ado, here’s what he said:

 SamsungFDSOIblog

While 14nm FinFET is the darling of the foundry industry at the moment, 28nm is the process node that everyone agrees will be used for many years to come for a wide variety of application designs.  Since 28nm will be long-lived, Samsung Foundry is taking steps to broaden its 28nm portfolio offering.

Today, Samsung entered into strategic agreement with ST Micro to license ST’s 28nm fully-depleted silicon-on-insulator (FD-SOI).  See full release below.  This agreement is another example of Samsung collaborating with strategic partners to offer customers leading-edge process technology with multi-source availability.  In this case, Samsung is able to run high-volume 28nm FD-SOI in its 300mm fabs in Korea to complement ST’s fab in France.

FD-SOI is one of those unique technologies that allows for the continuation of Moore’s Law with an upgrade to traditional planar semiconductor process technology.  This particular version of FD-SOI delivers a nice balance of higher performance with low power and is well suited for mobile and consumer electronics to IT infrastructure applications.

 

Are you considering a new SoC design with 28nm FD-SOI?  If so, we’d like to hear from you.

 

He then followed with a reposting of the press release, (you can see his whole blog on the Samsung website here.)

So there it is: Samsung is truly bullish on FD-SOI.  This is excellent news for the greater FD-SOI ecosystem – and for the entire design community.

To borrow a line from Bogart in the classic Casablanca, “I think this is the beginning of a beautiful friendship.”

Leave a Reply

Your email address will not be published. Required fields are marked *