Tokyo FD-SOI/RF-SOI Workshop (part 1): Samsung, ST presentations & more


A dozen excellent presentations on FD-SOI and RF-SOI were made by industry leaders at the recent workshop in Tokyo. Here in part 1 of ASN’s coverage, we’ll take a quick look at the presentations by Samsung, ST, IBS, IBM and Lapis.

In part 2, we’ll look at Sony’s, as well as the presentations from the big EDA vendors and the IP and design houses.

All of the presentations are now freely available on the SOI Consortium website (click here for the complete listing).

28FD-SOI: cost effective low power solution for long lived 28nm node by Yongjoo Jeon, Principle Engineer in Foundry Marketing, Samsung

This presentation makes the point that cost and power are equally critical
 factors in the long life foreseen for the 28nm node. (Samsung, of course, is offering ST’s FD-SOI technology on a foundry basis.) In particular, this presentation shows how FD-SOI is especially well-suited for low-power
 IoT apps. (btw, Semiwiki just published an excellent analysis of this Samsung presentation – you can read it here.) The process was successfully qualified in September 2014.

SamsungFDSOI_lowVDD
(Courtesy: Samsung)
SamsungFDSOIprocesscost
(Courtesy: Samsung)

 

FD-SOI advantages for applications and ecosystem by Kirk Ouellette, Director Digital Product Group, STMicroelectronics

As FD-SOI both improves power efficiency and brings high flexibility to SoC integration, this presentation points up the target app benefits:

(Courtesy: STMicroelectronics)
(Courtesy: STMicroelectronics)
  • For Consumer products, it’s optimized SoC integration with mixed signal and RF; Energy efficiency under all thermal conditions; Optimized leakage in idle mode
  • For IoT, it’s low-cost, ultra-low voltage operation, high scalability and efficient RF and analog integration
  • For networking infrastructure, it’s energy-efficient multicores, effective DVFS and excellent memory performance
  • For automotive, it’s handling leakage at high-temps and high reliability (especially SER re: memory).

RF-SOI: Redefining mobility through the Front End Module by Masashi Arimoto, Technical Executive, Mobile Platform, IBM Microelectronics Japan

In 2006, IBM started transforming a 200mm fab into a specialty foundry. RF-SOI and SiGe were key technologies for cell phone and WiFi front end modules (FEM).  Mobile is key for driving the business of IBM: for infrastructure, for Cloud and for Big Data/analytics. Having shipped over 8 billion RF-SOI chips (>1300 tapeouts) to top mobile customers on its 7RF SOI technology, the company recently announced a new process: 7SW SOI, which packs 30% more performance into a 30% smaller space. They’re seeing ever stronger demand, which IoT will only increase. (Interesting to note that IBM also now sees 300mm FD-SOI as an opportunity for the heart and soul of the cell phone: the application processors.)

(Courtesy: IBM)
(Courtesy: IBM)

RF-SOI and FD-SOI Market Opportunities by Handel Jones, CEO, IBS

Industry guru Handel Jones (read his ASN pieces here) gets into the details of what IoT means in terms of chips, and where and when growth will be happening. Don’t miss his detailed slides on die and wafer cost for the various nodes of FD-SOI, bulk and FinFET (see slides 20-26) – FD-SOI comes out the clear winner in terms of cost benefits. He then explores the various RF segments.

 

ST H9SOI_FEM: 0.13µm RF-SOI Technology for Front End Module Integration by Flavio Benetti, DPG Group VP – Networking Products Division GM, STMicroelectronics

(Courtesy: STMicroelectronics)
(Courtesy: STMicroelectronics)

Starting with a review of RF trends, this presenation shows how evolutions in the LTE wireless standard for this high-growth market are driving RF Front End Modules (FEM) to unprecedented complexity. ST sees RF-SOI integration as the right answer to that complexity (RF-SOI is of course already the leading technology in smartphone RF switches.) Slide 7 (see illustration) shows the explosive growth in the total annual market (TAM) for RF-SOI wafers. ST’s H9SOI_FEM offering pushes FEM integration to new heights, integrating switching, power amps, antenna tuning, energy management, LNA and filtering, all with best-in-class performance. This is an area in which ST is offering high-capacity foundry services, handling billions of units/year. (ST did an excellent ASN article detailing H9SOI_FEM last year – if you missed it, click here to read it now.)

 

Development of X-ray Sensor with SOI Pixel Technology by Masao Okihara, Device Technology Development Division, Manufacturing Headquarters, LAPIS Semiconductor

This presentation gives on update of the ongoing and fascinating work by a major consortium developing a one-chip monolithic X-ray sensor device on FD-SOI (this was also covered in ASN when the project was first getting underway – you can read that piece here. Oki, which is now Lapis, is providing the foundry services).

~ ~ ~

The next FD-SOI/RF-SOI full-day workshop will be held in San Francisco at the Palace Hotel on Friday February 27th 2015, the same week as ISSCC. A broad range of technology and design leaders from across the industry such as Cadence, Ciena, GlobalFoundries, IBM, IMEC, Samsung, STMicroelectronics, Synopsys and VeriSilicon will present compelling solutions in FD-SOI and RF-SOI technologies, including competitive comparisons and product results. Registration is mandatory, free and open to everyone – click here to go to the registration page on the SOI Consortium website. (Lunch will be offered to all the attendees.)

 

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