RF-SOI: Already in Every Smartphone, New Opps Abound in IoT (SF Workshop Part 3 of 3: IBM, ST, GF and more)

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RF-SOI is already found in virtually every new smartphone out there, so the RF-SOI session of the recent FD-SOI/RF-SOI Workshop in San Francisco focused on long-term growth and further opportunities.

In case you missed it, ASN already covered the SF Workshop’s FD-SOI presentations (Samsung, ST and the EDA houses – click here for that post) and the panel discussion (where we learned Cisco is working on an FD-SOI chip – click here to read that post). As we mentioned there, the workshop was a huge success, with over 150 people from over 80 companies in the audience.

The presentations are becoming available on the SOI Consortium website, so keep checking there. (Also, if you want to know more about how the special wafers for RF-SOI solve design challenges, Soitec contributed an excellent ASN article a couple years ago – click here to read it.) But for now, here’s a brief recap of the RF-SOI presentations.

IBM

IBM has been offering RF-SOI foundry services since 2007 and recently said it shipped more than 7 billion RF-SOI chips in the last 3 years (read more about that here). Clearly they are experts in this business. In his talk, RF-SOI: Redefining Mobility and More in the Front-End, Mark Ireland, VP of Strategy and Business Development, Microelectronics Division, IBM Systems & Technology Group, said that LTE is the fastest developing mobile system technology ever. A big driver is mobile video: the CAGR there is 66% over the next five years, and it’s happening on both high-end and low-end smartphones.

IBM_RFSOI_LTE

 

Next comes IoT as an RF-SOI driver, and he gave a roadmap and examples.

IBM_RFSOI_IoT

He also looked at demand for RF-SOI wafers, which are typically 200mm, but he noted that 300mm is starting to sustain growth, too.

IBM_RFSOI_wafers_lowres

(You might also want to also refer to the IBM RF-SOI presentations given recently in Shanghai and Tokyo.)

ST

In her presentation entitled, ST H9SOI_FEM: 0.13µm RF-SOI Technology for Front End Module Integration, Laura Formenti, Infrastructure and RF-SOI BU Director, STMicroelectronics focused on front-end module (FEM) integration (ST contributed an excellent article on this to ASN last summer – you can read it here). She made the link between new opportunities in RF-SOI and new developments by Soitec in RF-SOI wafers.

ST_RFSOI_roadmap

Putting power amplifiers (PA) on RF-SOI is starting to happen, and she provided data showing that they’re now closing in on GaAs in terms of performance.

ST_RFSOI_PA

ST is offering H9SOI_FEM on a foundry basis and as a partner. They can deliver prototypes within three weeks, and provide full integration up to packaging. (While you’re waiting for this presentation to be posted on the SOI Consortium website, you might want to refer to a similar presentation given recently by ST in Tokyo.)

GlobalFoundries

In SOI: An Enabler for RF Innovation and Wireless Market Disruption, Peter Rabbeni, Director of RF Segment Marketing at GlobalFoundries, focused on the value of SOI in RF, and explained why it presents an important opportunity for innovation at the system level.

GF_RFSOI_why

GF is the foundry partner for Peregrine (now part of Murata), and he showed how the GlobalONE PA integration is an excellent example of innovation opportunities.

GF_RFSOI_Peregrine

With an example of tunable filters, he also posited that the combination of FD-SOI and RF-SOI is a way to create disruption in wireless markets.

GF_RFSOI_FDSOI_filters

 

Incize

Incize is a spin-off of UCL in Belgium, which is a powerhouse in RF characterization. In fact, Soitec’s trap-rich SOI wafers, which are now being commercialized under the eSI moniker and launching a veritable RF revolution, were developed in partnership with UCL (you can read about that here). In his presentation entitled RF SOI: from Material to ICs – an Innovative Characterization Approach, Incize CEO Mostafa Emam explained non-destructive characterization for RF. Incize is currently working with eight customers, including wafer manufacturers. He highlighted the value of RF-SOI, and showed the characterization of Trap Rich vs. previous generations of high-resistivity (HR) SOI.

Imec

Barend Van Liempd, PhD Researcher at IMEC (Perceptive Systems dept.) / Leuven & Vrije Universiteit Brussel (VUB) (ETRO dept.,) gave a talk entitled Towards a Highly-Integrated Front-End Module in RF-SOI Using Electrical-Balance Duplexers. (He also presented this in a paper at ISSCC a few days prior.) He covered a highly integrated FEM program at Imec based on IBM technology and Electrical-Balance Duplexers.

More Workshops Coming

If you’d like to learn more about RF-SOI and/or FD-SOI, members of the SOI Consortium have been organizing these workshops around the world for the last six years (all the presentations from all the workshops are available here) and each one builds the momentum. But the workshops over the last six months (in Shanghai, Tokyo and now San Francisco) have taken that momentum to new levels. So keep an eye out for upcoming events throughout the coming year, where more and more users will be sharing their FD-SOI and RF-SOI design experiences.

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