Newest Leti Compact Model for FD-SOI Further Improves Predictability and Accuracy

TEM cross-section of FDSOI transistor (Courtesy of STMicroelectonics)
TEM cross-section of FDSOI transistor (Courtesy of STMicroelectonics)

CEA-Leti’s newest version of its advanced compact model for FD-SOI is now available in all major SPICE simulators (get the press release here). The Leti-UTSOI2.1 is the latest version of Leti’s compact model for FD-SOI, which was first released in 2013. (Compact models of transistors and other elementary devices are used to predict the behavior of a design. As such, they are embedded in simulations like SPICE that designers run before actual manufacturing. )

Leti-UTSOI2.1 further improves predictability and accuracy. These improvements include a direct and predictive link between bi-dimensional device electrostatics and process parameters, a refined description of narrow-channel effects, improved accuracy of moderate inversion regime and gate tunneling current modeling.

“This new version of the ultra-thin SOI model, which affirms Leti’s continuing leadership in FD-SOI technology, is ideal for designers seeking differentiation in energy management and performance for advanced nodes,” said Leti CEO Marie-Noëlle Semeria

Leti-UTSOI2.1, which considerably extends the domain of physical device description compared to other solutions, is now available in most of the commercial SPICE and Fast SPICE simulators used by industry.

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