GF’s 22nm FD-SOI Offering – Where to Get Lots of Excellent Info


A fast-growing body of information is now posted by GlobalFoundries on their new 22nm FD-SOI offering.

After years of asking “where’s FD-SOI on the GF website??”, it’s (finally!) there, front and center. There are some excellent new videos and documents. Here’s a rundown of what you’ll find.

GFwebsiteFDXintro
The 22FDX Platform introduction is the currently the lead topic on the GlobalFoundries website.

When you click down the “Technology Solutions” tab and select “Leading Edge Technologies”, here’s how they describe their 22nm FD-SOI offering:

GLOBALFOUNDRIES 22FDX™ platform employs 22nm Fully-Depleted Silicon-On-Insulator (FD-SOI) technology that delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies. While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides the best path for cost-sensitive applications. The 22FDX platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.

  • Ultra-low power consumption with 0.4V operation
  • Software-controlled transistor body-biasing for flexible trade-off between performance and power
  • Integrated RF for reduced system cost and back-gate feature to reduce RF power up to ~50%
  • 70% lower power than 28HKMG

Here are some of the resources posted on the website as of this writing:

Product Brief: 22FDX™ – a two-page pdf summarizing the platform advantages, the various application-optimized offerings, and basic graphics explaining how body-biasing works and what advantages it provides

FD-SOI Technology Innovations Extend Moore’s Law (white paper) – NEW! Just posted in September 2015, this 8-page white paper covers the basics of the FD-SOI transistor, how body biasing works, the impact the technology has on common circuit blocks (digital, analog & RF, embedded SRAM), and the outlook for future scaling (which goes down to 10nm).

15-GFwebinarSept28_FDX_ULPSOCex
This slide is about 17 minutes into GF’s “How to build ULP chips with 22nm FD-SOI…” webinar.

Webinar: How to Build Ultra Low Power Chips with New 22nm FD-SOI TechnologyNEW! Just posted on September 24, 2015. GF’s Jamie Schaeffer, Ph.D. Leading Edge Product Line Manager is talking to designers here. After a brief overview (he looks at the features, the extensions, the IP suite, and so forth), he gets into the fundamentals of body biasing, the different transistor optimizations, specific advantages for RF & analog, the tools for ultra-low-power design, and what’s in the design starter kits that are available today. Total running time is just under 20 minutes.

GFwebsiteFDXJulyWebinarPPcost
This slide is shown about 12 minutes into GF’s “Extending Moore’s Law with FD-SOI” webinar.

Webinar: Extending Moore’s Law with FD-SOI Technology – this is the webinar Jamie Schaeffer gave with ChipEstimate.com the day of the company’s FD-SOI announcement in July 2015. It’s a fairly high level presentation: very useful for designers, but also accessible to those outside the design community. There’s a lot of background on FinFET vs. FD-SOI, cost comparisons, target apps, and actual results seen in silicon. It’s an especially good place to start if FD-SOI is new to you. It runs just over 35 minutes.

Tech Video: Benefits of FD-SOI Technologies – in this short video by Subi Kengeri, GF’s VP of the CMOS Platforms BU, he gives a quick rundown of the benefits of FD-SOI. It runs about 2 minutes.

Another excellent place to get more indepth info on FD-SOI is an interview with Subi Kengeri by SemiEngineering Editor-in-Chief Ed Sperling (click here to see it on YouTube). This video, entitled Tech Talk: 22nm FD-SOI, was made just after the July announcement. Subi really goes into substantial detail, and clearly explains the key differences between FinFETs and FD-SOI. He explains why FD-SOI has less variability than FinFETs, why FinFETs have higher device capacitance, and how only with FD-SOI can you dynamically change Vt. FD-SOI also comes out better in terms of dynamic power, thermal budget and RF integration. Highly recommended – it runs just over 20 minutes.

You might also want to check out GF CEO Sanjay Jha’s Shanghai FD-SOI Forum presentation, The Right Technology at the Right Time, on the SOI Consortium website. (There are lots of others there, too!) Taking a bird’s eye view of the semiconductor industry drivers and requirements, he concludes, “22FDX and RFSOI have the power, performance, and cost to drive growth in mobile, pervasive, and intelligent computing.”

Which is great news for the SOI ecosystem and the entire industry.

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