Over the last few weeks there’s been another burst of activity in the FD-SOI arena. A new round of articles, videos and conferences are making FD-SOI the centerpieces. Here’s a quick round-up of things you won’t want to miss.
Info on GlobalFoundries 22nm FD-SOI offering just keeps on coming. Following the ASN roundup of info from the summer and fall (missed it? read it here), they’ve posted yet another excellent FD-SOI video:
How to optimize power and performance with 22FDX™ Platform body-biasing – Dr. Jamie Schaeffer gives a quick (under 3 minute) guide to the basics of front and reverse body-biasing, and the GF approach to a dynamic trade-off between power and performance . He explains how forward body bias (FBB) boosts performance at both high and low voltages, and how reverse body bias (RBB) cuts leakage for the lowest standby power. He also touches on FBB techniques for analog/RF designs.
They’re back! Though they’ve been pretty quiet recently, this latest Samsung video on their 28nm FD-SOI foundry offering hits right at the heart of IoT. Entitled The IoT Revolution and Samsung Foundry’s 28nm FD-SOI, the fun two-minute spot features two runners talking shop during a break. She asks: Is there a lot of design ecosystem support for FD-SOI? He answers: Absolutely. And he goes on to talk about the EDA/IP ecosystem they’re building. It ends on this tantalizing note: He: So you’re done? She: Not! Race you to the next station! He: Oh, it’s on!
With reader interest high and higher, FD-SOI continues to get great coverage in SemiWiki.com. Here are some recent good reads:
IP-SoC Rebound in 2015 ! – IP expert Eric Esteve covers FD-SOI highlights from the upcoming IP-SOC 2015 conference in Grenoble, France (2-3 December 2015), including these presentations (full program here):
- FDSOI is taking on speed as platform and a European focus project by Gerd Teepe, GlobalFoundries
- FDSOI IP Shop: The key enabler of success by Patrick Blouet, Collaborative program manager, STMicroelectronics
- Strategies for SoC / IP Design for Emerging Applications: An Indian perspective by Samir Patel, Sankalp Semiconductor
- Assessing and managing the IP Sourcing Risk by Philippe Quinio, STMicroelectronics
- Power Planning and Timing Signoff Solutions by SOI guru and ARM Fellow Jean-Luc Pelloie
- FD-SOI a New Era for Power Efficiency: Why and How? By Olivier Thomas, Silicon Impulse, CEA – LETI (btw, if you missed his excellent ASN piece explaining Leti’s Silicon Impulse program, you can still read it here)
28nm FD-SOI: A Unique Sweet Spot Poised to Grow – Pawan Fangaria explains why “…today the 28nm FD-SOI technology node stands to win as the best value added proposition for the emerging markets such as IoT, automotive, consumer, mobile, and so on.”
Globalfoundries 22FDX Technology Shows Advantages in PPA over 28nm Node – Tom Simon was at ARM Techcon, where he attended a talk sponsored by Cadence on the topic of using GlobalFoundries 22nm FD-SOI process to implement a quad core ARM Cortex-A17. He shares a number of the key slides in this informative blog.
SemiEngineering Editor-in-Chief Ed Sperling continues his great line-up of incisive interviews. In Increasing Challenges At Advanced Nodes, he gets some spot-on FD-SOI quotes from GlobalFoundries CTO Gary Patton, including:
- “It’s great that you get finFET performance at 28nm cost. But what’s really interesting for me is that you get software control. You can turn chips, blocks and circuits on and off. It’s a whole new degree of freedom for the designer.”
- “ I believe 22nm FD-SOI fits the sweet spot.”
- “We wouldn’t do 14nm FD-SOI. We would want a bigger jump than that. It would something closer to 10nm.[…] …it would be planar. If you go to finFET, you would lose the back body biasing. That’s a key attribute.”