To help designers assess 28nm FD-SOI power benefits, Keysight (formerly Agilent/HP test) adds more Leti-UTSOI modeling tech for SPICE

CEA-Leti has signed an agreement with Keysight Technologies (formerly the Agilent/HP test group), the industry-leading device-modeling software supplier, to adopt Leti’s UTSOI extraction flow methodology within Keysight’s device modeling solutions for high-volume SPICE model generation. (Read the press release here.)

“This collaboration between Leti and Keysight will strengthen the global FD-SOI ecosystem by providing an automatic extraction flow for building model cards associated with the Leti-UTSOI models, which are already available in all the major SPICE simulators,” said Marie Semeria, Leti’s CEO. “This professional, automatic extraction-flow solution will address designers’ needs as they weigh FD-SOI’s benefits over competing solutions for the 28nm technology node and below.”

Compact models of transistors and other elementary devices are used to predict the behavior of a design. As such, they are embedded in simulations like SPICE that designers run before actual manufacturing. Power optimization is of course a key component in SOC design. Automatic extraction helps ensure that the power intent specified by the designer in the simulated transistors will really match what will ultimately be seen in silicon.

The simulation of the Leti-UTSOI compact model, which is the first complete compact model dedicated to Ultra-Thin Body and Box and Independent Double Gate MOSFETs (aka FD-SOI), is currently available in Keysight’s modeling and simulation tools. This agreement expands the collaboration to include the extraction flow and will enable device-modeling engineers to efficiently create Leti-UTSOI model cards for use in Process Design Kits (PDKs).

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