GF’s 12nm FD-SOI With Back Bias Beats 10nm FinFET Performance (EETimes)


With back bias,12nm FD-SOI beats 10nm FinFET on performance. This excellent news comes in by way of Peter Clarke of EETimes Europe (read the whole article here). Rutger Wijburg, GM of GloFo’s Dresden fab told him, “If you look at performance with back-bias 22FDX is the same or better than 16/14nm FinFET process. With 12FDX with back bias you get better than 10nm FinFET processes.”

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