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GF’s 12nm FD-SOI With Back Bias Beats 10nm FinFET Performance (EETimes)

With back bias,12nm FD-SOI beats 10nm FinFET on performance. This excellent news comes in by way of Peter Clarke of EETimes Europe (read the whole article here). Rutger Wijburg, GM of GloFo’s Dresden fab told him, “If you look at performance with back-bias 22FDX is the same or better than 16/14nm FinFET process. With 12FDX […]

NXP, Qualcomm, Skyworks to Keynote IoT Theme in Upcoming IEEE SOI-3D-SubVt (S3S) Conference (San Francisco, Oct.’16) – Late News Submissions Open, Advance Program Available

IEEE S3S Conference 10-13 October 2016 Hyatt Regency San Francisco Airport IEEE SOI–3D–Subthreshold Microelectronics Technology Unified Conference Theme: Energy Efficient Technology for the Internet of Things Late News submissions open and Advance Program available The IEEE S3S Conference brings together 3 key technologies that will play a major role in tomorrow’s industry: SOI, 3D integration, […]

Samsung Adding eFlash and eMRAM Options to 28nm FD-SOI (EETimes)

Samsung is adding two embedded NVM (non-volatile memory) options to its 28nm FD-SOI line-up, Kelvin Low told EETimes‘ Peter Clark in a recent interview (read the whole piece here). Low, who heads up marketing and bizdev for Samsung Foundry, indicated the following roll-out for 28nm FD-SOI: eFlash – risk production by the end of 2017; […]

FD-SOI at DAC 2016

If you’re headed to DAC (June 5-9 in Austin,TX) and are interested in learning more about FD-SOI, there will be lots of opportunities. Here’s a quick rundown. Synopsys-GlobalFoundries: Dinner! Synopsys (stands 149 & 361) and GlobalFoundries are hosting a dinner on Tuesday evening (7 June) at the Austin Hilton around the theme, What’s Important for […]

ST moving digital automotive to 28nm FD-SOI (EETimes)

FD-SOI is the default choice for digital in ST’s automotive and discrete group (ADG), Marco Monti, EVP of the business unit told EETimes’ Peter Clarke in a recent article (read it here). The next generation of ST’s most advanced microcontrollers (currently on 40nm bulk) will be on 28nm FD-SOI, he said. Monti also gave examples […]

Why Dan Hutcheson/VLSIresearch, Inc. (finally!) Likes FD-SOI

Dan Hutcheson, CEO of VLSIresearch, Inc. finally likes FD-SOI. That’s important, because he’s a really influential person in the chip world. Everybody who’s anybody in the chip biz pays attention to what VLSIresearch, Inc. has to say. Dan recently gave a talk entitled “FD-SOI: Disruptive or Just Another Process?” to a packed-to-the-brim room during the […]

Use 28nm FD-SOI, Samsung advises new customers and designers (SemiEngineering)

“We intend to focus all new engagements in design using 28nm FD-SOI,” Samsung Semi’s Kelvin Low told SemiEngineering’s Mark Lapedus in a recent article (read it here). Low, who’s senior directory of the company’s foundry marketing says they’ll of course continue to support existing 28nm bulk customers, “But we think FD-SOI has enough benefits to […]

Impressive! Soitec FD-SOI Press Conference in China = >150 Articles

FD-SOI makes sense for China. That was the key message SOI wafer leader Soitec made in a press conference on FD-SOI for a select group of journalists just before Semicon China this spring. News then quickly spread, and resulted in over 150 FD-SOI articles in the top China technology and business press. Soitec also put […]

New Chips and Design Wins for RF-SOI Pioneer Peregrine Semi

From RF-SOI pioneer Peregrine Semi comes a steady stream of new chips and design wins. News include: Two UltraCMOS® MPAC–Doherty products—the PE46130 and PE46140 (press release here). These monolithic phase and amplitude controllers (MPAC) join the PE46120 in offering maximum phase-tuning flexibility for Doherty power amplifier (PA) optimization. Designed for the LTE and LTE-A wireless-infrastructure […]