Peregrine in volume shipping of UltraCMOS® 60 GHz RF SOI Switches

Peregrine Semiconductor recently announced immediate availability of volume production parts for their UltraCMOS® 60 GHz RF SOI switches. (Read the full press release here.) The PE42525 and PE426525 extend Peregrine’s high frequency portfolio into frequencies previously dominated by GaAs technology. Both 60 GHz switches deliver exceptional performance in all key RF parameters and have a […]

EuroSOI 2017 – 3-5 April in Athens

The 2017 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) will be held April 3-5 in Athens, Greece. Although EuroSOI has been ongoing for many years, this marks the third year it joins forces with the ULIS conference. Sponsored by the IEEE and EDS, the goal is to create an […]

GF: 45nm RF-SOI PDKs for 5G

GlobalFoundries has announced availability of its 45nm RF-SOI technology (read the press release here). Dubbed 45RFSOI, the company says it’s the first 300mm RF solution for next-gen mmWave beamforming applications in future 5G base stations and smart phones. The technology supports mmWave spectrum operation from 24GHz to 100GHz band, 5x more than 4G operating frequencies. […]

GF FD-SOI: Fab for China, Expansion in Europe

SOI Consortium member GlobalFoundries is teaming up with the Chengdu municipality to build a fab in western China offering FD-SOI (see press release here). The partners plan to establish a 300mm fab to support the growth of the Chinese semiconductor market and to meet accelerating global customer demand for 22FDX®, GF’s 22nm FD-SOI process technology. […]

Big Win for FD-SOI: Sony GPS in Huami/Xiaomi Smartwatch (EETimes)

Sony’s 28nm FD-SOI GPS rolling out in the Xiaomi Amazfit smartwatch is “…a big win for Sony” and “…an even bigger win for FD-SOI’s promoters,” said Junko Yoshida of EETimes (see Sony-Inside Huami Watch: Is It Time for FD-SOI?). Then she adds:“Huami’s watch decidedly demonstrates the technology’s claim to ultra-low power consumption.” Xiaomi is a subsidiary […]

GF’s 12nm FD-SOI With Back Bias Beats 10nm FinFET Performance (EETimes)

With back bias,12nm FD-SOI beats 10nm FinFET on performance. This excellent news comes in by way of Peter Clarke of EETimes Europe (read the whole article here). Rutger Wijburg, GM of GloFo’s Dresden fab told him, “If you look at performance with back-bias 22FDX is the same or better than 16/14nm FinFET process. With 12FDX […]

Samsung Adding eFlash and eMRAM Options to 28nm FD-SOI (EETimes)

Samsung is adding two embedded NVM (non-volatile memory) options to its 28nm FD-SOI line-up, Kelvin Low told EETimes‘ Peter Clark in a recent interview (read the whole piece here). Low, who heads up marketing and bizdev for Samsung Foundry, indicated the following roll-out for 28nm FD-SOI: eFlash – risk production by the end of 2017; […]

ST moving digital automotive to 28nm FD-SOI (EETimes)

FD-SOI is the default choice for digital in ST’s automotive and discrete group (ADG), Marco Monti, EVP of the business unit told EETimes’ Peter Clarke in a recent article (read it here). The next generation of ST’s most advanced microcontrollers (currently on 40nm bulk) will be on 28nm FD-SOI, he said. Monti also gave examples […]

Use 28nm FD-SOI, Samsung advises new customers and designers (SemiEngineering)

“We intend to focus all new engagements in design using 28nm FD-SOI,” Samsung Semi’s Kelvin Low told SemiEngineering’s Mark Lapedus in a recent article (read it here). Low, who’s senior directory of the company’s foundry marketing says they’ll of course continue to support existing 28nm bulk customers, “But we think FD-SOI has enough benefits to […]

New Chips and Design Wins for RF-SOI Pioneer Peregrine Semi

From RF-SOI pioneer Peregrine Semi comes a steady stream of new chips and design wins. News include: Two UltraCMOS® MPAC–Doherty products—the PE46130 and PE46140 (press release here). These monolithic phase and amplitude controllers (MPAC) join the PE46120 in offering maximum phase-tuning flexibility for Doherty power amplifier (PA) optimization. Designed for the LTE and LTE-A wireless-infrastructure […]