Samsung Announces Next FD-SOI Node: 18nm

Big News: Samsung has officially revealed that their next FD-SOI node is 18nm.  The announcement was made at the recent Samsung Foundry Forum, which showcased a number of new technologies that the company says will help enable the development of new devices connecting consumers in entirely new ways. (You can read the full press release […]

SOI Visionary Sorin Cristoloveanu Receives IEEE 2017 Andrew Grove Award

Sorin Cristoloveanu has been named the 2017 recipient of one of the IEEE’s highest honors, the Andrew Grove Award, for his “contributions to silicon-on-insulator technology and thin body devices.” An IEEE Fellow and highly regarded figure in the SOI community, Sorin is the Director of Research at the French National Center for Scientific Research (CNRS […]

Must Read! EETimes Covers NXP’s First FD-SOI Chips and FD-SOI Symposium

EETimes Editor Rick Merritt has posted an excellent piece entitled NXP Shows First FD-SOI Chips. He attended the SOI Consortium’s recent FD-SOI Symposium in Silicon Valley, and used the event to score interviews with key executives from NXP, Samsung and GlobalFoundries. The piece has generated a big buzz, having been shared several hundred times on […]

New Advanced NV Memory IP for FDSOI – Attopsemi Joins GF’s FDXcelerator Program

There’s a new memory IP specialist on board for the FDSOI ecosystem. Attopsemi Technology has joined GlobalFoundries’ FDXcelerator™ Partner Program (read the press release here). Attopsemi is ensuring that its scalable, non-volatile one-time programmable (OTP) memory IP is compatible with GF’s 22FDX® technology. Their leading-edge I-fuse™ OTP IP is a fuse-based OTP technology that can […]

Peregrine in volume shipping of UltraCMOS® 60 GHz RF SOI Switches

Peregrine Semiconductor recently announced immediate availability of volume production parts for their UltraCMOS® 60 GHz RF SOI switches. (Read the full press release here.) The PE42525 and PE426525 extend Peregrine’s high frequency portfolio into frequencies previously dominated by GaAs technology. Both 60 GHz switches deliver exceptional performance in all key RF parameters and have a […]

EuroSOI 2017 – 3-5 April in Athens

The 2017 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) will be held April 3-5 in Athens, Greece. Although EuroSOI has been ongoing for many years, this marks the third year it joins forces with the ULIS conference. Sponsored by the IEEE and EDS, the goal is to create an […]

GF: 45nm RF-SOI PDKs for 5G

GlobalFoundries has announced availability of its 45nm RF-SOI technology (read the press release here). Dubbed 45RFSOI, the company says it’s the first 300mm RF solution for next-gen mmWave beamforming applications in future 5G base stations and smart phones. The technology supports mmWave spectrum operation from 24GHz to 100GHz band, 5x more than 4G operating frequencies. […]

GF FD-SOI: Fab for China, Expansion in Europe

SOI Consortium member GlobalFoundries is teaming up with the Chengdu municipality to build a fab in western China offering FD-SOI (see press release here). The partners plan to establish a 300mm fab to support the growth of the Chinese semiconductor market and to meet accelerating global customer demand for 22FDX®, GF’s 22nm FD-SOI process technology. […]

Big Win for FD-SOI: Sony GPS in Huami/Xiaomi Smartwatch (EETimes)

Sony’s 28nm FD-SOI GPS rolling out in the Xiaomi Amazfit smartwatch is “…a big win for Sony” and “…an even bigger win for FD-SOI’s promoters,” said Junko Yoshida of EETimes (see Sony-Inside Huami Watch: Is It Time for FD-SOI?). Then she adds:“Huami’s watch decidedly demonstrates the technology’s claim to ultra-low power consumption.” Xiaomi is a subsidiary […]

GF’s 12nm FD-SOI With Back Bias Beats 10nm FinFET Performance (EETimes)

With back bias,12nm FD-SOI beats 10nm FinFET on performance. This excellent news comes in by way of Peter Clarke of EETimes Europe (read the whole article here). Rutger Wijburg, GM of GloFo’s Dresden fab told him, “If you look at performance with back-bias 22FDX is the same or better than 16/14nm FinFET process. With 12FDX […]