Conquering Convergence

ST looks at a hybrid FD-SOI/bulk approach to SOCs for multimedia. The heterogeneous nature of System-on-Chip (SOC) design for the next generations of wireless, high-performance, low-power multimedia applications makes it a complex balancing act. Our research indicates that a hybrid FD-SOI/Bulk, high-k/metal-gate platform is an excellent candidate for such applications, most probably around the 22nm […]

Get the Picture

Hitachi’s latch-up-free, SOI-based chips enable new generations of compact medical ultrasound systems. Medical challenge Ultrasound systems need to be smaller, more cost-effective, and higher performance – without compromising reliability. Design challenge Ultrasound is based on high-voltage pulses that drive transducers, which create and receive bursts of sound waves. Low-power, high-performance electronics control a complex set […]

ETSOI Substrates: What We Needi

IBM’s roadmap to ETSOI – Extremely Thin Silicon on Insulator – calls for very thin, very flat SOI substrates. Here’s why. ETSOI transistors are thin-channel planar devices. Halo implantation is used to control electrostatics in conventional transistors. Although the halo controls the short channel effects, it also causes large random doping fluctuations and increases junction […]

Smart Sense

UCL researchers leverage SOI in a powerful, affordable sensor design. Medical challenge In pharmacology, medical diagnostics or security applications, sensors that detect micro-nano-objects like biomolecules, cancer markers or infectious agents need to be faster, smarter and more sensitive, but also more affordable. Design challenge There are many different approaches to integrated sensor-on-a-chip design, but basically […]

Model Behavior

Leti has compact models ready for FD-SOI SPICE simulations. A critical link in the move to FD-SOI is the availability of robust compact models. Compact models of transistors and other elementary devices are used to predict the behavior of a design.  As such, they are embedded in simulations like SPICE that designers run before actual […]

Using FD-SOI to Design Competitive Chips

FD-SOI solves challenges without complicating design and manufacturing. Designing a successful consumer-type IC requires a balanced combination of: packing in more differentiating features, reaching good performance with low power, keeping final application costs competitive, and respecting time-to-market. Figure 1 illustrates how just a few key features intrinsic to FD-SOI translate into advantages that serve those […]

Fully Depleted (FD) SOI for the Next Generation

FD-SOI is making the move towards industrialization. In this issue of ASN, experts from IBM, ST, Hitachi, Leti and Soitec detail their approaches. What is it ? In planar FD-SOI  (as opposed to the verticality of FinFETs), CMOS transistors are built into an ultra-thin layer of silicon over a Buried Oxide (BOx) (which can optionally […]

The Moment Is Now

There’s no need to wait – Hitachi’s SOTB solution also benefits today’s mainstream low-power nodes. Hitachi’s Hybrid Silicon-On-Thin-Box (SOTB)-Bulk technology offers many benefits for low-power system-on-chips (SOCs) at 45nm –  and even at 65nm. There is no reason to wait for 22nm to start taking advantage of them. The four most significant reasons to change […]

The Next Big Thing

Leading equipment and materials suppliers have created the European 450mm Equipment and Materials Initiative – or EEMI 450, for short. The steering committee comprises two substrate manufacturers (Soitec and Siltronic), three equipment suppliers (ASML, ASM, Recif), academics (IMEC, FHG) and Intel. EEMI 450’s global counterparts are ITB-J (Interoperability Test Bed – Japan) and ISMI (International […]

On the Leading Edge

Key advances in transistor research start on SOI. SOI has always been the substrate of choice to explore new silicon device concepts and structures. The full dielectric isolation of the silicon allows one to dismiss the sometimes complex junction isolation schemes used in bulk silicon. The possibility of making devices in thin silicon films has […]