SOI Visionary Sorin Cristoloveanu Receives IEEE 2017 Andrew Grove Award

Sorin Cristoloveanu has been named the 2017 recipient of one of the IEEE’s highest honors, the Andrew Grove Award, for his “contributions to silicon-on-insulator technology and thin body devices.” An IEEE Fellow and highly regarded figure in the SOI community, Sorin is the Director of Research at the French National Center for Scientific Research (CNRS […]

Must Read! EETimes Covers NXP’s First FD-SOI Chips and FD-SOI Symposium

EETimes Editor Rick Merritt has posted an excellent piece entitled NXP Shows First FD-SOI Chips. He attended the SOI Consortium’s recent FD-SOI Symposium in Silicon Valley, and used the event to score interviews with key executives from NXP, Samsung and GlobalFoundries. The piece has generated a big buzz, having been shared several hundred times on […]

Part 2: NXP’s new i.MX 7ULP – More on Why It’s On 28nm FD-SOI

As you learned in Part 1 of this article, NXP is calling its new i.MX 7ULP general-purpose processor, “The most advanced, lowest power-consuming GPU-enabled MPU on the market.” Now let’s get into a little more detail about why it’s on 28nm FD-SOI. If you read NXP VP Ron Martino’s terrific, two-part ASN piece last year […]

Big Win for FD-SOI: Sony GPS in Huami/Xiaomi Smartwatch (EETimes)

Sony’s 28nm FD-SOI GPS rolling out in the Xiaomi Amazfit smartwatch is “…a big win for Sony” and “…an even bigger win for FD-SOI’s promoters,” said Junko Yoshida of EETimes (see Sony-Inside Huami Watch: Is It Time for FD-SOI?). Then she adds:“Huami’s watch decidedly demonstrates the technology’s claim to ultra-low power consumption.” Xiaomi is a subsidiary […]

12nm FD-SOI on the Roadmap for H1/2019 Customer Tape-out! Says GloFo (While Giving 22FDX Ecosys a Great Boost)

12nm FD-SOI has now officially joined the GlobalFoundries’ roadmap, targeting intelligent, connected systems and beating 14/16nm FinFET on performance, power consumption (by 50%!) and cost (see press release here). Customer product tape-outs are expected to begin in the first half of 2019. GloFo also announced FDXcelerator™, an ecosystem designed to give 22FDX™ SoC design a […]

GF’s 12nm FD-SOI With Back Bias Beats 10nm FinFET Performance (EETimes)

With back bias,12nm FD-SOI beats 10nm FinFET on performance. This excellent news comes in by way of Peter Clarke of EETimes Europe (read the whole article here). Rutger Wijburg, GM of GloFo’s Dresden fab told him, “If you look at performance with back-bias 22FDX is the same or better than 16/14nm FinFET process. With 12FDX […]