During the full day training on “designing with FD-SOI technologies”, world-renown professors and scientists from UC Berkeley, Stanford, Toronto and Lund Universities and respectively STMicroelectronics will teach about FDSOI specific design techniques in the domains of analog, RF, mmW and mixed signal, as well as ultra-low power memories and energy efficient digital and analog-mixed signal processing designs.
Andreia Cathelin, STMicroelectronics
Carlos Mazuré and Giorgio Cesana, SOI Industry Consortium
address of tutorial site will be posted soon
8.00 – 8.30: breakfast
Andreia Cathelin, Fellow, STMicroelectronics Crolles, France:
FDSOI short overview and advantages for analog, RF and mmW design
9.30 – 10.30:
Sorin Voinigescu, Professor, University of Toronto, Toronto, Canada:
Unique circuit topologies and back-gate biasing scheme for RF, mm-wave and broadband circuit design in FDSOI technologies
10.30 – 11.00: break
11.00 – 12.00:
Joachim Rodrigues, Professor, Lund University, Lund, Sweden:
Design strategies for ULV memories in 28nm FDS-SOI
12.00 – 13.00: lunch
13.00 – 14.00:
Bora Nikolic, Professor, UC Berkeley, Berkeley, USA :
Energy-Efficient Processors in 28nm FDSOI
14.00 – 15.00:
Boris Murmann, Professor, Stanford University, Palo Alto, USA:
Pushing the envelope in mixed-signal design using FD-SOI
End of tutorial day.
Detailed FDSOI Tutorial program and abstracts.