New Advanced NV Memory IP for FDSOI – Attopsemi Joins GF’s FDXcelerator Program

There’s a new memory IP specialist on board for the FDSOI ecosystem. Attopsemi Technology has joined GlobalFoundries’ FDXcelerator™ Partner Program (read the press release here). Attopsemi is ensuring that its scalable, non-volatile one-time programmable (OTP) memory IP is compatible with GF’s 22FDX® technology. Their leading-edge I-fuse™ OTP IP is a fuse-based OTP technology that can […]

Implementing ARM Cortex A-series in 22nm FD-SOI – GloFo tech webinar

Registration is open for GlobalFoundries’ technical webinar, “How to Implement an ARM Cortex-A17 Processor in 22FDX 22nm FD-SOI Technology” (click here to go to the registration page). The webinar will cover the optimal steps to successfully implement ARM® Cortex®-A Series* processors using 22FDXTM 22nm FD-SOI technology. GF Design Enablement Fellow Dr. Joerg Winkler will address: […]

GlobalFoundries and Synopsys Streamline the Move to 22nm FD-SOI

By: Tamer Ragheb, Digital Design Methodology Technical Manager at GlobalFoundries and Josefina Hobbs, Senior Manager of Strategic Alliances, Synopsys It’s clear that getting an optimal balance of power and performance at the right cost is foremost in the minds of designers today. Designers who want either high performance or ultra low-power, or ideally both, have a […]

Great FD-SOI start for 2016: Samsung, GF, Renesas, NXP/Freescale, ST, Soitec

Just a month into 2016 and we already have a raft of FD-SOI news from Samsung, GlobalFoundries, NXP/Freescale, Renesas and more. And of course RF-SOI continues ever stronger. Here’s a quick update of what we’ve been seeing, starting with news from the recent SOI Consortium forum in Tokyo. Many of the presentations are now available on […]

Mentor tools being qualified for GlobalFoundries’ 22nm FD-SOI process

Mentor Graphics is collaborating with GlobalFoundries on 22nm FD-SOI to qualify the Mentor® RTL to GDS platform for the current version of GlobalFoundries 22FDX™ platform reference flow. (Read the press release here.) This includes including Mentor’s RealTime Designer™ physical RTL synthesis solution and Olympus-SoC™ place & route system. In addition, Mentor and GF are working […]

Leti Develops 22nm FD-SOI Local-strain Techniques to boost performance and lower power consumption

CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed or lower power consumption and improved performance. (For more details, read the press release here.) Targeting the 22/20nm node, the local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si […]