EuroSOI 2017 – 3-5 April in Athens

The 2017 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) will be held April 3-5 in Athens, Greece. Although EuroSOI has been ongoing for many years, this marks the third year it joins forces with the ULIS conference. Sponsored by the IEEE and EDS, the goal is to create an […]

Impressive! Soitec FD-SOI Press Conference in China = >150 Articles

FD-SOI makes sense for China. That was the key message SOI wafer leader Soitec made in a press conference on FD-SOI for a select group of journalists just before Semicon China this spring. News then quickly spread, and resulted in over 150 FD-SOI articles in the top China technology and business press. Soitec also put […]

Silicon Valley FD-SOI Symposium Promises Best Ecosystem Line-Up Ever: ARM, Foundries, EDA, Designers, Experts & Users (13 April – free and open to all who sign up)

The SOI Consortium has lined up an excellent, comprehensive FD-SOI Symposium on April 13th in San Jose. They’ll be highlighting the tremendous progress of the FD-SOI ecosystem. Headliners include Cisco, Sony, NXP, SigmaDesigns, ARM, Ciena plus the big FD-SOI foundries, EDA companies, design partners, chipmakers and analysts. There is a special session dedicated to RF […]

China Design Conference (April 2016) Adds RF-SOI Design Track

EDI CON China 2016, taking place April 19-21 in Beijing at the China National Convention Center (CNCC) will feature a keynote talk by GlobalFoundries‘ Peter Rabbeni, Sr. Director, RF BU Business Development & Product Marketing. The talk, entitled, “RF SOI: Revolutionizing Radio Design Today and Driving Innovation for Tomorrow”, will kick off the newly added RF-SOI […]

Don’t miss EuroSOI-ULIS, 25-27 January 2016 in Vienna. Call for papers still open.

The 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, aka EUROSOI-ULIS 2016 will be taking place January 25-27, 2016 in Vienna, Austria. The event will be hosted by the Institute for Microelectronics, TU Wien. The focus of the sessions is on SOI technology and advanced nanoscale devices. The organizing committee […]

IBM 0.3V SOI-FinFET SRAM paper garners press attention

An IBM paper on a 14nm SOI-FinFET SRAM functional down to 0.3V has garnered press attention. The paper, entitled 14nm FinFET Based Supply Voltage Boosting Techniques for Extreme Low Vmin Operation by R.V. Joshi et al, was presented during the Symposium on VLSI Circuits in Kyoto, Japan in June. According to the abstract, the authors […]