How SOI wafers for RF predict LTE-A/5G device performance

Soitec has developed an innovative metrology and metric for ensuring that devices built on our latest SOI wafers for RF will meet the draconian demands of LTE-Advanced (LTE-A) and 5G network standards. For smartphones and tablets to handle LTE-A and 5G, they need RF devices with much higher linearity than those running over the current […]

LTE-A/5G: Bring it on. Next-gen Soitec eSI90 wafers predict & improve RF performance.

The folks at SOI wafer maker Soitec have announced an amazing update to their RF wafer line-up, with what they’re calling their eSI90 substrate (read the press release here). As you might expect, it improves on their terrifically successful line of substrates for the RF chips in smartphones and other mobile devices. And now with […]

Soitec’s Shipped Enough eSI RF-SOI Substrates to Make over 1.4 Billion Devices

Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.)  The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE applications. […]

Soitec White Paper Explains Value of New RF-SOI Wafers for 4G/LTE Applications

Soitec has issued a highly-informative new white paper on its enhanced signal integrity – aka eSI™ – wafers for 4G and LTE/A applications (to get the paper, click here).  Entitled “Innovative RF-SOI Wafers for Wireless Applications”, the paper explains the various challenges faced by RF IC designers, and how the new eSI wafers offer powerful […]

Soitec’s New eSI SOI Wafers For 4G/LTE (Now in High Volume Production) Used at Most Leading RF Foundries

Soitec has reached high-volume manufacturing of our new Enhanced Signal Integrity™ (eSI) substrates, enabling cost-effective and high-performance RF devices. They are the first ‘trap-rich’ type of material in full production, and are already used in manufacturing by most of the leading RF foundries in front-end modules for 4G and LTE mobile computing and communication applications. […]

SOITEC and UCL boost the RF performance of SOI substrates

Soitec and a team from UCL have been working together to identify the technological opportunities to further improve the high-frequency performance of SOI substrates. Based on the wideband characterization techniques developed at UCL, the RF characteristics of high-resistivity (HR) SOI substrates have been analyzed, modeled and greatly improved in order to meet the specifications of […]