GF Delivering 45RFSOI Customer Prototypes for 5G

GlobalFoundries’ 45nm RF-SOI platform is qualified and ready for volume production on 300mm wafers (read the company’s full press release here).  It was just at the beginning of last year that GF announced the PDK availability for 45RFSOI (we covered it here).  Now there are several customers engaged for this advanced RF SOI process, which […]

RF-SOI Roars Back into the Headlines

Articles about chips built on RF-SOI technology are back in the headlines. What’s driving it? Data – lots of it, and at ever higher speeds, finding its way in and out of your mobile device. Bear in mind that we’re talking now about RF-SOI, which is not the same thing as RF in FD-SOI. These […]

RF-SOI Key in MagnaChip IoT Plans

RF-SOI will play a key role in the IoT plans of analog and mixed-signal specialist MagnaChip (read the press release here). The company has launched a task force to address IoT. The statement says, “MagnaChip also offers 0.18 micron and plans to offer 0.13 micron Silicon on Insulator (SOI) RF-CMOS technologies, which is suitable for […]

New All-CMOS RF-SOI Front-End Solution from Peregrine/Murata First to Integrate Filters and Module Capabilities

Peregrine Semiconductor and Murata have launched the 2015 UltraCMOS® Global 1 Initiative, which includes the UltraCMOS Global 1 PE56500 and seamlessly integrates Murata filters and packaging into the RF-SOI front-end solution. (See press release here.) Built on Peregrine’s UltraCMOS 10 technology, the PE56500 combines Peregrine’s proven RF-SOI switch and tuner technology with new CMOS PA […]

Soitec’s Shipped Enough eSI RF-SOI Substrates to Make over 1.4 Billion Devices

Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.)  The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE applications. […]

MagnaChip and the National Nano Fab Center (“NNFC”) have entered into an SOI RF CMOS technology transfer agreement that combines MagnaChip’s specialty manufacturing expertise with NNFC’s robust RF technology.

MagnaChip and the National Nano Fab Center (“NNFC”) have entered into an SOI RF CMOS technology transfer agreement that combines MagnaChip’s specialty manufacturing expertise with NNFC’s robust RF technology. The two companies have targeted expansion into the emerging RF front-end module (“FEM”) foundry market.

STMicroelectronics says its new manufacturing process, known as H9SOI_FEM, allows production of complete integrated front-end modules

STMicroelectronics says its new manufacturing process, known as H9SOI_FEM, allows production of complete integrated front-end modules. This process is an evolution of the H9SOI SOI process, a groundbreaking technology introduced by ST in 2008 and subsequently used by customers to produce more than 400 million RF switches for mobile phones and Wi-Fi applications. Building on […]

In the three months following Peregrine Semi’s announcement of the latest version of its UltraCMOS® process technology, the company has followed with a steady stream of news

In the three months following Peregrine Semi’s announcement of the latest version of its UltraCMOS® process technology, STeP8 for RF Front End ICs, the company has followed with a steady stream of news. (The UltraCMOS technology is an advanced RF SOI process leveraging bonded silicon-on-sapphire (BSOS) substrates from Soitec.) Recent announcements include: a collaborative sourcing […]

Altis Semiconductor will be a foundry partner for the IBM 180nm SOI technology

Specialty foundry Altis Semiconductor will be a foundry partner for the IBM 180nm SOI technology. ALTIS will deliver high volume products starting Q2 2013 and will secure capacity increase for 2014 and beyond to address the IBM forecasted demand.  This foundry agreement addresses the next generation of consumer products, including as an example, the RF/SOI […]