More Good FD-SOI News from DATE Conference – ST, Leti, Mentor, CMP

At the recent DATE Conference in Grenoble (DATE is like DAC, but in Europe, alternating yearly between Grenoble and Dresden), STMicroelectronics, CEA-Leti & Mentor Graphics joined forces for a FD-SOI presentation organized by CMP and sponsored by Mentor. Here are some of the highlights (the complete presentations are all available from the CMP website). FD-SOI: […]

ST’s FD-SOI Wins EETimes ACE Award… and Customers!

Two important FD-SOI wins for STMicroelectronics have just been announced: The EETimes ACE Award for Energy Technology; Customers. The Energy Technology Award was presented at a ceremony for the 2013 Annual Creativity in Electronics (ACE) Awards. It is given by EETimes and EDN, two of the most prominent trade-media sources in electronics. The ACE Awards […]

Common Platform Technology Forum 2013: SOI Highlights

The 2013 Common Platform Technology Forum showcased “the latest technological advances being delivered to the world’s leading electronics companies,” so of course SOI-based topics were well-represented. Happily, those of us who weren’t able to get over to Silicon Valley were able to attend “virtually” via a live stream (which is now reposted – click here […]

Design Highlights: ST-Ericsson’s 28nm FD-SOI SmartPhone/Tablet Chip

Just Posted: FD-SOI video & white paper. Just as this blog was going online, ST-Ericsson posted an excellent, in-depth white paper; and in partnership with STMicroelectroics, a YouTube video detailing the how’s and why’s of FD-SOI.Here are the links — you really don’t want to miss these: • Multiprocessing in Mobile Platforms: the Marketing and […]

ST-Ericsson’s 28nm FD-SOI SmartPhone/Tablet Chip at Vegas – a Great Start to 2013

What a great start to 2013: at CES in Las Vegas, ST-Ericsson announced the NovaThor™ L8580 ModAp, “the world’s fastest and lowest-power integrated LTE smartphone platform.” This is the one that’s on STMicroelectronics’ 28nm FD-SOI, with sampling set for Q1 2013. And it’s a game changer – for users, for designers, for foundries, and for […]

The Transition to Fully Depleted

The SOI Industry Consortium is actively engaged in supporting the industry’s transition to fully-depleted (FD) technologies. FD technologies offer: better electrostatics, so you’ve got stronger gate control; and lower channel doping, which enables better SRAMs that can operate stably at lower supply voltages – resulting in power savings of up to 40%. There are two […]

Four researchers from STMicroelectronics and Leti have received the 2012 Général Ferrié Award

For their work on FD-SOI, four researchers from STMicroelectronics and Leti have received the 2012 Général Ferrié Award, considered the highest award in electronics R&D in France.  Claire Fenouillet-Béranger and Olivier Faynot from Leti, and Stéphane Monfray and Frédéric Bœuf from ST are credited with validating the technological choice for FD-SOI, while also enabling its […]

Want Silicon Proof? Check Out the Fully-Depleted Tech Symposium During SF/IEDM

If you want to cut through the noise surrounding the choices for 28nm and beyond, an excellent place to start is the SOI Consortium’s Fully Depleted Technology Symposium. As a member of the design and manufacturing communities, this is your chance to see and hear what industry leaders are actually doing. Planar? FinFET? The Consortium’s […]