Tokyo FD-SOI/RF-SOI Workshop (part 1): Samsung, ST presentations & more

A dozen excellent presentations on FD-SOI and RF-SOI were made by industry leaders at the recent workshop in Tokyo. Here in part 1 of ASN’s coverage, we’ll take a quick look at the presentations by Samsung, ST, IBS, IBM and Lapis. In part 2, we’ll look at Sony’s, as well as the presentations from the […]

IBM z13, world’s fastest microprocessor – on SOI, of course!

The recently announced IBM z13, which is billed as the world’s fastest microprocessor, is built on SOI (of course!) (read the press release here). At the heart of the latest in the IBM z-series of mainframes, the chip is manufactured in 22nm SOI (partially depleted). IBM says it is 2X faster than the most common […]

2015 – Turning the Tables for FD-SOI, RF-SOI and More

If current momentum is any indication, 2015 will be the year the tables turn in favor of FD-SOI designs (with a big shout-out to IoT).  The RF-SOI juggernaut will continue cutting an enormous swath through the mobile market.   Attention to the exciting possibilities of monolithic 3D (M3D) technology (like Leti’s “CoolCube”) will continue to grow, […]

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS and future devices at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 3, we’ll […]

Strong uptick in FD-SOI patent activity, according to KnowMade report

There’s been a significant uptick in patents related to fully-depleted SOI, according to a new report by KnowMade (click here to get the report brochure).  The report looks at both FD-SOI and SOI-FinFETs (both of which are fully depleted technologies).  More than 740 patent families have been published to date, of which planar FD-SOI accounts for 340 families.  Following a […]

SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage)

Beyond FD-SOI and FinFETs, important SOI-based developments in advanced device architectures including nanowires (NW), gate all around (GAA) and other FET structures shared the spotlight at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 2 of […]

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. There were about 40 SOI-based papers presented at IEDM. Here in Part 1 of ASN’s IEDM coverage, we […]

Successful RF-SOI 2014 International Symposium Held in Shanghai

A very successful international workshop on RF-SOI was held in Shanghai earlier this fall.  Jointly organized by industry leaders, it brought together world-class players in RF to discuss the opportunities and challenges in rapid development of RF applications.Sponsors included the SOI Industry Consortium, the Chinese Academy of Sciences (CAS) / Shanghai Institute of Microsystem and […]