Tag Archive memory

ByAdele Hars

PCM/MRAM Workshop by Leti and Applied Materials During 2019 IEEE Intl. Memory Workshop

Two of the big, recent breakthroughs in memory technology – eMRAM and ePCM – have gotten their start in volume manufacturing on 28nm FD-SOI. In conjunction with the 2019 IEEE International Memory Workshop, SOI Consortium members Leti and Applied Materials have teamed up to give a technical program to explore short-term and long-term memory solutions. While the workshop is not specific to SOI, given the recent foundry announcements about ePCM and eMRAM for FD-SOI, the organizers predict it will be of particular interest to those following the greater SOI ecosystem. The event takes place at the end of the Sunday IMW tutorial day, starting at 5:30pm at the Hyatt Regency in Monterey, CA. Please see this page for the program and registration information.

Here is the program:

  • Emerging Non-Volatile Memory Promises Toward New Energy-Efficient Design and Applications – Michael Tchagaspanian, VP Business Development, CEA-Leti
  • Technologies That Enable MRAM and PCRAM in Volume Manufacturing – Kevin Moraes, Vice President, Metal Deposition Products, Applied Materials
  • Technology Improvements Directions of Emerging Non-Volatile Memory for New Applications Solutions – Etienne Nowak, Head of Memory Laboratory, CEA-Leti
  • Integration Schemes and Challenges for New Memories in a New Artificial Intelligence Era –Michel Frei, Director, Advanced Product & Technology Development, Applied Materials

Jean-Eric Michallet, Head of Leti’s Microelectronics Components Department, Silicon Component Division is one of the organizers. Here is his overview:

FD-SOI is expected to be a long-lived technology. It enables planar CMOS scaling and accommodates a great deal of More-than-Moore developments where its ability for low power and great analog performance can make a difference for IoT, Automotive, Machine Learning or 5G applications. But to do this it requires a high-performance and cost-effective non-volatile embedded memory option. The incumbent Flash cell is reaching the end of its roadmap due to the difficulty of shrinking the bitcell and manufacturing, as well as the finished wafer cost increase. Back-end integrated Random Access Memory in advanced CMOS process has been explored for many years now as a competitive solution for fast-write and low-voltage non-volatile embedded memories. Foundry availability of embedded Magnetic RAM and Phase Change RAM for FDSOI 28nm platforms has been announced recently, showing that these technologies have now reached industrial maturity. CEA-Leti and Applied Materials invite you to attend a technical program to explore short-term and long-term memory solutions, from early research to industrialization.

Registration is open, free, and available to all IMW attendees, and others. However, as seating is limited and as we have already several participants pre-registered, registration is by invitation only and early registration is recommended. If you are interested, please email Jean-Eric Michallet.

The event is presented in conjunction with the 2019 IEEE International Memory Workshop, to be held on Sunday, May 12th, 2019, Hyatt Regency, Monterey CA, starting at 5:30 pm.

ByAdele Hars

World 1st and It’s on 28nm FD-SOI: ST Sampling ePCM (eNVM) for Automotive MCUs

STMicroelectronics is now sampling 28nm FD-SOI microcontrollers (MCUs) with embedded non-volatile memory (eNVM) based on ePCM to alpha customers. Field trials meeting the requirements of automotive applications and full technology qualification are expected in 2020. These MCUs—the world’s first to use ePCM, which stands for embedded Phase-Change Memory—will target powertrain systems, advanced and secure gateways, safety/ADAS applications, and Vehicle Electrification. (Read the full press release here.)

A cross section of the embedded-PCM bitcell integrated in the 28nm FD-SOI technology shows the heater that quickly flips storage cells between crystalline and amorphous states. (Courtesy: STMicroelectronics)

“Having applied ST’s process, design, technology, and application expertise to ePCM, we’ve developed an innovative recipe that makes ST the very first to combine this non-volatile memory with 28nm FD-SOI for high-performance, low-power automotive microcontrollers,” said Marco Monti, President Automotive and Discrete Group, STMicroelectronics. “With samples already in some lead-customers’ hands, we’re confirming the outstanding temperature performance of ePCM and its ability to meet all automotive standards, further assuring our confidence in its market adoption and success.”

ePCM presents a solution to chip- and system-level challenges, meeting automotive MCU requirements for AEC-Q100 Grade 0, operating at temperature up to +165°C. In addition, ST says its technology assures firmware/data retention through high-temperature soldering reflow processes and immunity to radiation, for additional data safety.

Architecture and performance benchmark updates were presented the most recent IEDM (December 2018 in San Francisco) in a paper entitled Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory (F. Arnaud et al). As of this writing, the IEDM 2018 papers are not yet posted on the IEEE Xplore Digital Library site. However, the ppt that ST presented at the conference is available here.

For more in-depth information on ePCM, see the ST PCM page. To learn more about how it compares with competing technologies such as eMRAM, read Embedded Phase-Change Memory Emerges by Mark Lapedus of SemiEngineering. Papers describing other eNVM solutions on FD-SOI were also presented at IEDM 2018. Samsung’s is entitled Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic (Y. J. Song et al). GlobalFoundries’ is entitled 22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-1 MCU Applications (K. Lee et al).

ByAdele Hars

EuroSOI-ULIS (April 2019, Grenoble) + Free FD-SOI RF Technology Workshop for 5G

If you’ve never been, you should put it on your list. EuroSOI is one of those seminal conferences where you get a front-row seat to emerging technologies. It provides an interactive forum for scientists and engineers working in the field of new materials and advanced nanoscale devices. In fact, some of the leading technologies enabled by SOI that are now in the mainstream got their start at this conference. Within a few years of being presented here, the best work continues to evolve and star in the “big” conferences like IEDM and VLSI.

The list of luminaries on the steering and technical committees is a veritable who’s who of the SOI research ecosystem, including two winners of the IEEE Andrew Grove Award: Technical Chair Jean-Pierre Colinge and Sorin Cristoloveanu. So, if you want to get in on the ground floor of next-gen SOI, or just get a look at the early stages of the pipeline, this is a great place to do it.

One of the key objectives is to promote collaboration and partnership between players in academia, research and industry. As such it provides opportunities for cross-fertilization across materials, devices and design. The networking is excellent, and the gala dinner is always an affair to remember.

This year, papers in the following areas have been solicited:

  • Advanced SOI materials and wafers. Physical mechanisms and innovative SOI-like devices
  • New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.
  • Properties of ultra-thin films and buried oxides, defects, interface quality. Thin gate dielectrics: high-κ materials for switches and memory.
  • Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.
  • Alternative transistor architectures including FDSOI, DGSOI, FinFET, MuGFET, vertical MOSFET, Nanowires, FeFET and Tunnel FET, MEMS/NEMS, Beyond-CMOS nanoelectronic devices.
  • New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain, nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.
  • CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling. Three-dimensional integration of devices and circuits, heterogeneous integration.
  • Transport phenomena, compact modeling, device simulation, front- and back-end process simulation.
  • Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices.
  • Emerging memory devices.

Accepted papers appear in the conference proceedings in the IEEE Xplore® digital library. The authors of the best papers are invited to submit a longer version for publication in a special issue of Solid-State Electronics. A best paper award will be attributed to the best paper by the SiNANO institute.

EuroSOI-ULIS kicks off a full week of activities in Grenoble. The day after the conference, Incize and Soitec are sponsoring an excellent, free workshop on FD-SOI RF technologies for 5G: materials, devices, circuits and performance. The’ve got a terrific line-up of presentations planned.

And towards the end of the week, there are other important satellite events. The 1st open IRDS International Roadmap for Devices and Systems European Conference (April 4th, 2019) is jointly organized by the USA, Japan and EU, and sponsored by the IEEE and SiNANO Institute. Then the week finishes out with the IEEE ICRC International Conference on Rebooting Computing (April 5th, 2019).

Grenoble the first week of April 2019 is clearly the place to be.

ByAdele Hars

Samsung Adding eFlash and eMRAM Options to 28nm FD-SOI (EETimes)

Samsung is adding two embedded NVM (non-volatile memory) options to its 28nm FD-SOI line-up, Kelvin Low told EETimes‘ Peter Clark in a recent interview (read the whole piece here).

Low, who heads up marketing and bizdev for Samsung Foundry, indicated the following roll-out for 28nm FD-SOI:

  • eFlash – risk production by the end of 2017; volume in 2018
  • eMRAM (SST-MRAM) – risk production by the end of 2018; volume in 2019


ByGianni PRATA

On FD-SOI, Surecore’s ULP SRAM Saves 70% Power; Company Raised $1.6 Million (SemiEngineering)

SureCore’s ultra-low power SRAM technology on 28nm FD-SOI saves 70% in read/write power and reduces leakage by 30% compared to 40nm bulk implementations, writes SemiconductorEngineering Editor-In-Chief Ed Sperling (read the article here). Hitting the sweet spot for mobile, IoT and wearables, SureCore recently raised $1.6 million in funding.

ByGianni PRATA

Leti’s M3D, now dubbed “CoolCube”, featured in EETimes

Leti's M3D technology is now called "CoolCube". (Courtesy: Leti, IEDM 2014)

Leti’s M3D technology is now called “CoolCube”. (Courtesy: Leti, IEDM 2014)

Leti’s monolithic 3D technology, which has now been dubbed “CoolCube”, was featured in a recent EETimes piece.  Entitled True 3D monolithic integration eliminates TSV dependence (click here to read it), the article covers a Leti paper presented during a 3D-VLSI workshop preceding IEDM ’14.  Leti’s Advanced CMOS lab manager Maud Vinet detailed the “cool” process in an FPGA, stacking a 14nm FD-SOI logic layer on top of a memory layer. It eliminates the need for TSVs, shrinks area by 55%, cut power in half and increases speed by 30%, effectively gaining a full node in terms of power and performance.

ByGianni PRATA

Two additions to Altatech equipment lines: 10x faster ultra-thin film deposition; Doppler nano-defect inspection captures true sizing and positioning

The Orion Lightspeed™ inspection system by Altatech (a division of Soitec) pinpoints the true size and location of nano-scale defects inside compound semiconductor materials and transparent substrates

The Orion Lightspeed™ inspection system by Altatech (a division of Soitec) pinpoints the true size and location of nano-scale defects inside compound semiconductor materials and transparent substrates

Two new products from semi equipment manufacturer Altatech: one for ultra-thin film deposition, and one for searching out nano-defects. Altatech is a division of Soitec, best known in the advanced substrates community for its leadership in SOI wafers. This part of the company, however, develops highly efficient, cost-effective inspection and chemical vapor deposition (CVD) technologies used for R&D and manufacturing of semiconductors, LEDs, MEMS and photovoltaic devices.

The company’s newest inspection system, the Orion Lightspeed™, is capable of pinpointing the size and location of nano-scale defects inside compound semiconductor materials and transparent substrates (see press release here). The new system helps to ensure the quality control of high-value engineered substrates used in several fast growing markets including high-brightness LEDs, power semiconductors and 3D ICs. Inspection is based on Altatech’s patented synchronous Doppler detection™ technology, which determines the exact size and position of defects by making direct physical measurements with resolution below 100 nm. This provides true defect sizing, as opposed to other types of inspection equipment on the market that make indirect measurements using diffracted light to calculate approximate defect sizes. It handles 200mm or 300mm substrates, with throughput of 85 and 80 wafers per hour, respectively. Beta systems have already been installed at customers’ facilities and are demonstrating excellent performance. Shipments of production units are scheduled to begin in April 2015.

The new AltaCVD 3D Memory Cell™ is the latest member of Altatech’s AltaCVD line, designed to deposit ultra-thin semiconductor films that enable the manufacturing of high-density, low-power memory ICs used throughout mobile electronics (see press release here). The new system performs atomic-layer deposition 10 times faster than conventional atomic-layer deposition (ALD) systems, helping to meet global market demands for both high-volume production and cost efficiency in fabricating advanced memories. The system is currently demonstrating its unique capabilities and performance at one of Altatech’s key customers. Production units are available.

ByFanny Rodriguez

Welcome to IEEE S3S – the World’s Leading Conference for SOI, 3DI and Sub Vt (SF, 6-9 Oct)


(For best rates, register by September 18th.)

The 2014 IEEE SOI-3DI–Subthreshold (S3S) Microelectronics Technology Unified Conference will take place from Monday October 6 through Thursday October 8 in San Francisco.

Photo Credit: Catherine Allibert

Photo Credit: Catherine Allibert

Last year we entered into a new era as the IEEE S3S Conference. The transition from the IEEE International SOI Conference to the IEEE S3S conference was successful by any measurement. The first year of the new conference leading-edge experts from 3D Integration, Sub-threshold Microelectronics and SOI fields gathered and we established a world class international venue to present, learn and debate about these exciting topics. The overall participation at the first year of the new conference grew by over 50%, and the overall quality and quantity of the technical content grew even more.

This year we are looking forward to continuing to enhance the content of the 2014 S3S Conference.


Short courses: Monolithic 3D & Power-Efficient Chip Tech

On Monday, Oct. 6 we will feature two Short Courses that will run in parallel. Short courses are an educational venue where newcomers can gain overview and generalists can learn more details about new and timely topics.

The short course on Monolithic 3D will be a full day deep dive into the topic of three-dimensional integration wherein the vertical connectivity is compatible with the horizontal connectivity (10,000x better than TSV). Already there are extremely successful examples of monolithic 3D Flash Memory. Looking beyond this initial application, we will explore the application of monolithic 3D to alternate memories like RRAM, CMOS systems with silicon and other channel materials like III V. In addition, a significant portion of the short course will be dedicated to the exciting opportunity of Monolithic 3D in the context of CMOS Logic.

The other short course we will offer this year is entitled Power Efficient Chip Technology. This short course will address several key aspects of power-efficiency including low power transistors and circuits. The course will also review in detail the impact of design and architecture on the energy-efficiency of systems. The short course chairs as well as the instructors are world class leading experts from the most prestigious industry and academic institutions.


Conference program

The regular conference sessions will start on Tuesday Oct. 7 with the plenary session, which will feature presentations from Wall Street (Morgan Stanley Investment Banking), Microsoft and MediaTek. After the plenary session we will hear invited talks and this year’s selection of outstanding papers from international researchers from top companies and universities. The most up to date results will be shared. Audience questions and one on one interaction with presenters is encouraged.

Back by popular demand we will have 2 Hot Topics Sessions this year. The first Hot Topic Session is scheduled for Tuesday Oct. 7th and will feature exciting 3DI topics. The other Hot Topics session is scheduled for Thursday Oct 9 and will showcase new and exciting work in the area of MEMS.

Our unique poster session and reception format will have a short presentation by the authors followed by one on one interaction to review details of the poster with the audience, in a friendly atmosphere, around a drink. Last year we had regular posters as well as several invited posters with very high quality content and we anticipate this year’s poster session to be even better than last years.

We are offering a choice of two different fundamentals classes on Wednesday afternoon. One of the Fundamentals classes will focus on Robust Design of Subthreshold Digital and Mixed Circuits, with tutorials by the worlds leading experts in this field. The SOI fundamentals course is focused on RF SOI Technology Fundamentals and Applications.

Our technical content is detailed on our program webpage.


Panel discussions, cookout & more

Keeping in line with tradition, on Wednesday night we will have a hearty cook out with delicious food and drink followed by the Panel Session entitled Cost and Benefit of Scaling Beyond 14nm. Panel speakers from financial, semiconductor equipment, technology, and academic research institutions will gather along with the audience to debate this timely topic. Although Thursday is the last day of the conference we will have stimulating presentations on novel devices, energy harvesting, radiation effects along with the MEMS Hot Topic Session and Late News Session. As always we will finish the conference with the award ceremony for the best papers.

SFstreetsignOur conference has a long tradition of attracting presenters and audience members from the most prestigious research, technology and academic institutions from around the world. There are many social events at the S3S Conference as well as quiet time where ideas are discussed and challenged off line and people from various fields can learn more about other fields of interest from leading experts.

The conference also offers many opportunities for networking with people inside and also outside ones area. The venue this year is San Francisco. We chose this location to attract the regions leading experts from Academia and Industry. If you have free time we encourage you to explore San Francisco which is famous for a multitude of cultural and culinary opportunities.

Please take a moment to learn more about our conference by browsing our website or downloading our advance program.

To take full advantage of this outstanding event, register before September 18!

Special hotel rates are also available from the dedicated hotel registration page.

The committee and I look forward to seeing you in San Fransisco.

– Bruce Doris, S3S General Chair

 Photo Credit: Catherine Allibert

Photo Credit: Catherine Allibert
ByGianni PRATA

ST presents silicon R&D results on hafnium memory technology for FD-SOI MCUs

Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate process.” The project is under the aegis of a French government funded program for “…the development of magnetic RAM and resistive RAM embedded memory options for the 28nm fully-depleted silicon-on-insulator (FDSOI) manufacturing process and subsequent generations.” MCU tape-out is scheduled for the end of 2014.

ByGianni PRATA

New SOI Textbook (and e-book) with contributions by experts at Soitec, GF, TSMC, Leti and more

A new book entitled Silicon-On-Insulator (SOI) Technology, Manufacture and Applications (1st Edition) features contributions by experts at Soitec, GF, TSMC, Leti and more.

Billed as “a complete review of this rapidly growing high-speed, low-power semiconductor technology,” the book covers the entire SOI spectrum, from Moore to More than Moore.  It goes into SOI wafer technology,  electrical properties, modeling, PD-SOI, FD-SOI, FinFETs and junctionless transistors, RF, ultralow-power, photonics, memory, power and MEMS.  (See Table of Contents here.) This book should be a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics, as well as for electrical engineers in the automotive and consumer electronics sectors.

Silicon-On-Insulator (SOI) Technology, Manufacture and Applications is published by Woodhead Publishing, and is also available in print and ebook forms from major online retailers such as Amazon, Elsevier and Barnes & Noble. It was compiled and edited by Oleg Kononchuk, chief scientist at Soitec, France, and Bich-Yen Nguyen, a senior fellow at Soitec, USA.