Tag Archive R&D

ByAdele Hars

Interview: €103M OCEAN12 Project for Automotive/Aeronautic FD-SOI in Europe

ASN had a chance to talk to François Brunier of Soitec, who’s leading this important project.

Advanced Substrate News (ASN): Can you tell us briefly about OCEAN12?

Francois Brunier (FB): OCEAN12 stands for Opportunity to Carry European Autonomous driviNg further with FD-SOI technology up to the 12nm node.

Francois Brunier, Partnership Program Manager, Soitec.

It’s an ECSEL project (ECSEL is the Electronic Components and Systems for European leadership, an EU-driven, public-private partnership that funds innovation). The budget is 103M€ for a European consortium of 27 partners from 7 different countries. The topic is “Ultra-low power computing solutions for automotive and aeronautics using all the range of FD-SOI technologies”, and Soitec is the project leader.

ASN: Why is it needed?

FB: As of today a car has around 500 million transistors. These electronic components represent already an important vector of valorization and differentiation for the automotive industry and for the consumer. The increased autonomy of the vehicles will require a very strong build-up of computational capacities. 50 to 100 times more transistors could be required for a level 5 (fully autonomous car). Following this trend an autonomous car will require a power consumption equivalent to that of 50 to 100 computers running continuously (without taking into account the car propulsion).

The OCEAN12 partners.

The power consumption of these components becomes a key element in the choice of technologies. We believe that our technologies on SOI present the best assets to meet this challenge.

The FD-SOI solutions developed in OCEAN12 offer a palate of different solutions to this challenge. Indeed the solutions will come with components that are more performant for data processing (including Artificial Intelligence), much more energy efficient, more highly-integrated and smaller to fit in embedded systems like in autonomous cars, reliable, and enabling safe connectivity.

The OCEAN12 project will demonstrate that SOI technologies are able to meet these challenges through relevant demonstrators in the targeted fields.

ASN: What are the project goals?

FB: OCEAN12 will bring concrete solutions to the main challenges of smart connectivity and low power consumption for autonomous driving in the automotive industry.

As such, OCEAN12 will build awareness around the key enabling technologies in substrate development, transistor behavior, and the design and fabrication of components up to the system and end-user application levels. We will show that the technology is useful for automotive and aerospace applications, which are strategic sectors for Europe. Having the whole supply chain in Europe means having trusted and secured components made in Europe.

The OCEAN12 project goals stand on three pillars:

  • First: Confirming the technology foundation. Ocean12 puts the FD-SOI substrate and device developers in direct contact with the full value chain of suppliers and end users. This gives the entire ecosystem visibility into current and future needs, and ensures that substrate and device solutions are both technically feasible and correctly aligned with actual system requirements.
  • Second: Creating concrete, innovative demonstrators in automotive (Audi, Bosch) and aeronautics (Airbus, Thales). These demonstrators are a first step in defining the context and environment to prove the advantages of these technologies in real application cases, showing they are useful and as such prefigure a final system and a potential future product roadmap. Demonstrators should be as close as possible to the final application.
  • Third: Broadening the design ecosystem, with the big companies, the small- and medium-sized companies (SMEs) and the research organizations (universities, RTOs). We have a critical mass of 16 design ecosystem partners focusing their efforts on FD-SOI. The project leverages that dynamic FD-SOI design ecosystem for IC product migration to FD-SOI and the creation of new IP. Inventing the future components in Europe is also key.

ASN: Can you tell us more about the demonstrators? When will we see them?

FB: There are four demonstrators. All these demonstrators will be delivered by the end of the project in 2021:

  • Always-on wake-up systems (Audi, Bosch, Leti). With such a system we can imagine an application to monitor our car when it is parked in a parking lot for a long time. This system remains aware of everything that goes on around the car. If there’s an intrusion, the cameras take pictures and launch different actions. But you will not have to worry about battery drain: even though all the sensors are always on, they go right back into a very low-power sleep mode thanks to FD-SOI technology.
  • mm-Wave integrated radar SOCs (Bosch and Audi) which will benefit from all the innovations of FD-SOI, thanks to its low consumption properties, but also the optimization of the sensors. The performance gain is made over the entire system with adaptations between analog and logic.
  • High-performance video processor for aeronautics. (Airbus, Thales, Kalray). Kalray, a French SME working on Massively Parallel Processor Arrays (MPPA) aims to demonstrate an ultra-low power, low-cost, high-performance neural processor on FD-SOI technology. This demonstrator would be key for Airbus and Drones with high-performance, low-power cameras. Airbus and Audi have partnered on air and ground mobility services, which explains the interest for Audi.
  • Microcontroller plug-and-play board. This is lead by ST for things like GNSS/GPS.

ASN: Can you tell us more about the partners?

FB: The OCEAN12 consortium of 27 partners involves 8 large groups, 9 SMEs and 10 universities/RTOs. These partners come from 7 different European countries.

The eight large groups include: Soitec, the world’s leading provider of FD-SOI substrates; EVG, a leading global equipment supplier; GlobalFoundries and STMicroelectronics, the two major European FD-SOI foundries; and Bosch, a Tier 1 automotive supplier. At the top of the value chain, high-end European automotive manufacturer Audi, the avionics industrial giant Airbus, and Thales for security issues, will develop product demonstrations.

Ten highest-level research institutes support the industrial consortium. They include CEA-Leti (FR), Fraunhofer (GE), IMS (FR), INP Grenoble (FR), TU Dresden (GE), U. Paderborn (GE), Bundeswehr U. Munich (GE), Eberhard Karls U. Tübingen (GE), Instituto de Telecomunicações (PT), and Warsaw UT (PL). They increase the competitiveness through technological innovation and transfer of technical know-how while gaining new expertise working with global leaders.

In addition, OCEAN 12 has a very strong SME consortium covering the supply chain in the fields of new equipment, IP, system integration and fabless companies. They include: IBS, UnitySC (HSEB), MunEDA, Kalray, AED Engineering, ISD, EVOTEL, M3 Systems and Design&Reuse.

All these partners have longstanding experience of cooperation in various national and international frameworks and are specialists in their field of activity. Their contributions are essential for the success of the project.

ASN: What is the timetable?

The OCEAN12 kick-off event at Soitec’s headquarters near Grenoble.

FB: The project started on April 1st 2018. The kick off with all the partners was held at Soitec on 29 September 2018. It was a great success. The project runs through December 2021, by which point everything has to be demonstrated.

ASN: Can you clarify the funding structure?

FB: The budget is about €103.6M. If the project succeeds, we get European Commission funding. In that case, just over 20% of the eligible cost – about €23M – is subsidized at the European level. The seven countries with companies or organizations participating in the project will then roughly match the European subsidies, contributing about €27M. However, the majority of the budget is paid by the participating companies and organizations.

These ECSEL-type public-private projects are a tried and true model in Europe, maximizing synergy across ecosystems. For example, we saw how well it worked with RF-SOI, which also had European and national funding, and is now in every smartphone made in the world.

To conclude, in the name of the consortium I’d like to thank the ECSEL JU, the European Commission and our National Funding Agencies from France (DGE), Germany, Portugal, Greece, Spain, Austria and Poland. Such a project would not exist without them.

ByAdele Hars

EuroSOI-ULIS (April 2019, Grenoble) + Free FD-SOI RF Technology Workshop for 5G

If you’ve never been, you should put it on your list. EuroSOI is one of those seminal conferences where you get a front-row seat to emerging technologies. It provides an interactive forum for scientists and engineers working in the field of new materials and advanced nanoscale devices. In fact, some of the leading technologies enabled by SOI that are now in the mainstream got their start at this conference. Within a few years of being presented here, the best work continues to evolve and star in the “big” conferences like IEDM and VLSI.

The list of luminaries on the steering and technical committees is a veritable who’s who of the SOI research ecosystem, including two winners of the IEEE Andrew Grove Award: Technical Chair Jean-Pierre Colinge and Sorin Cristoloveanu. So, if you want to get in on the ground floor of next-gen SOI, or just get a look at the early stages of the pipeline, this is a great place to do it.

One of the key objectives is to promote collaboration and partnership between players in academia, research and industry. As such it provides opportunities for cross-fertilization across materials, devices and design. The networking is excellent, and the gala dinner is always an affair to remember.

This year, papers in the following areas have been solicited:

  • Advanced SOI materials and wafers. Physical mechanisms and innovative SOI-like devices
  • New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.
  • Properties of ultra-thin films and buried oxides, defects, interface quality. Thin gate dielectrics: high-κ materials for switches and memory.
  • Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.
  • Alternative transistor architectures including FDSOI, DGSOI, FinFET, MuGFET, vertical MOSFET, Nanowires, FeFET and Tunnel FET, MEMS/NEMS, Beyond-CMOS nanoelectronic devices.
  • New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain, nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.
  • CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling. Three-dimensional integration of devices and circuits, heterogeneous integration.
  • Transport phenomena, compact modeling, device simulation, front- and back-end process simulation.
  • Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices.
  • Emerging memory devices.

Accepted papers appear in the conference proceedings in the IEEE Xplore® digital library. The authors of the best papers are invited to submit a longer version for publication in a special issue of Solid-State Electronics. A best paper award will be attributed to the best paper by the SiNANO institute.

EuroSOI-ULIS kicks off a full week of activities in Grenoble. The day after the conference, Incize and Soitec are sponsoring an excellent, free workshop on FD-SOI RF technologies for 5G: materials, devices, circuits and performance. The’ve got a terrific line-up of presentations planned.

And towards the end of the week, there are other important satellite events. The 1st open IRDS International Roadmap for Devices and Systems European Conference (April 4th, 2019) is jointly organized by the USA, Japan and EU, and sponsored by the IEEE and SiNANO Institute. Then the week finishes out with the IEEE ICRC International Conference on Rebooting Computing (April 5th, 2019).

Grenoble the first week of April 2019 is clearly the place to be.

ByAdele Hars

Leti and Soitec launch new Substrate Innovation Center – all partners welcome!

Leti and Soitec have announced a new collaboration and five-year partnership agreement to drive the R&D of advanced engineered substrates, including SOI and beyond. This agreement brings the traditional Leti-Soitec partnership to a whole new dimension and includes the launch of a world-class prototyping hub associating equipment partners to pioneer with new materials, The Substrate Innovation Center will feature access to shared Leti-Soitec expertise around a focused pilot line. Key benefits for partners include access to early exploratory sampling and prototyping, collaborative analysis, and early learning at the substrate level, eventually leading to streamlined product viability and roadmap planning at the system level.

CEOs Emmanuel Sabonnadière (Leti) and Paul Boudre (Soitec) announcing the new Substrate Innovation Center during Semicon West ’18. (Image courtesy: Leti)

Leading chip makers and foundries worldwide use Soitec products to manufacture chips for consumer applications targeting performance, connectivity, and efficiency with extremely low energy consumption. Applications include smart phones, data centers, automotive, imagers, and medical and industrial equipment, but this list is always growing, along with the need for flexibility to explore new applications starting at the substrate level. At the Substrate Innovation Center, located on Leti’s campus, Leti and Soitec engineers will explore and develop innovative substrate features, expanding to new fields and applications with a special focus on 4G/5G connectivity, artificial intelligence, sensors and display, automotive, photonics, and edge computing.

“Material innovation and substrate engineering make entire new horizons possible. The Substrate Innovation Center will unleash the power of substrate R&D collaboration beyond the typical product road maps, beyond the typical constraints,” said Paul Boudre, Soitec CEO. “The Substrate Innovation Center is a one-of-a-kind opportunity open to all industry partners within the semiconductor value chain.”

Whereas a typical manufacturing facility has limited flexibility to try new solutions and cannot afford to take risks with prototyping, the mission of the Substrate Innovation Center is to become the world’s preferred hub for evaluating and designing engineered substrate solutions to address the future needs of the industry, inclusive of all the key players, from compound suppliers to product designers. Using state of the art, quality-controlled clean room facilities, and the latest industry-grade equipment and materials, Leti and Soitec engineers will conduct testing and evaluation at all levels of advanced substrate R&D.

“Leti and Soitec’s collaboration on SOI and differentiated materials, which extends back to Soitec’s launch in 1992, has produced innovative technologies that are vital to a wide range of consumer and industrial products and components,” said Emmanuel Sabonnadière, Leti CEO. “This new common hub at Leti’s campus marks the next step in this ongoing partnership. By jointly working with foundries, fabless, and system companies, we provide our partners with a strong edge for their future products.”

ByAdele Hars

Synopsys-GF-Qualcomm Panel, Leti/Fraunhofer Team Up – FD-SOI Center Stage at Leti Innovation Days

Before summer’s no more than a twinkle in our eyes, let’s take a moment to catch up on a key event where FD-SOI took center stage: Leti Innovation Days. French research powerhouse Leti was celebrating 50 years of innovation, so it was a real gala event.

FD-SOI and other SOI technologies were seen and heard throughout the presentations and in the exhibition spaces. But there were a couple of things that were especially interesting that I’ll cover here in ASN. In particular, a panel discussion with GF, Synopsys and Qualcomm; and the big announcement from Leti and Fraunhofer supporting continued FD-SOI development.

(There were also some great info about body biasing in FD-SOI, but we’ll save that for a future post.)

The Panel & More

A session on Micro-nano Pathfinding and the Digital Revolution featured a fascinating panel discussion on Future Applications and New Technologies. As Rajesh Pankaj from Qualcomm, Alain Mutricy from GF and Antun Domic from Synopsys discussed the prospects, FD-SOI quickly took center stage.

FD-SOI took center stage at this Leti Innovation Days 2017 Panel Discussion. Left to right: Antun Domic, CTO, Synopsys; Alain Mutricy, GF’s SVP, Product Management Group; Rajesh Pankaj, Qualcomm’s SVP Corporate R&D.

Here are some FD-SOI observations from GF’s Alain Mutricy:

  • It’s planar, so it’s not hard to design in.

  • It’s the only technology that can get down to 0.4V, and it has the lowest leakage/cell. That will be key for all mainstream applications (except high-end servers) for at least a decade or two.

  • 12 FDX with forward body bias (FBB) will get 7nm FinFET performance.

  • They’re looking forward to broad FD-SOI adoption. It will enable the next wave of technology and mobile devices.

Synopsys’ Antun Domic noted that:

  • Currently, 50% of silicon area comes from just 3 or 4% of designs. FD-SOI makes design simpler, so the EDA companies are looking for it to open the door to more designs.

  • From a design perspective, three thresholds was standard, but that’s not enough. Place and route could stretch to 10 or 15 corners. FD-SOI simplifies tool flow and cuts mask costs. It’s less complicated than you think.

That tech session, btw, began with an excellent testimonial by Leti partner, Soitec. (Remember: the technological innovation that enabled modern SOI wafers came out of Leti and was industrialized by Soitec.) Check out the snapshot below to get an idea of all the areas that SOI-based technologies address.

Soitec SVP Christophe Maleville shows the many product lines of SOI substrates.

Leti, Fraunhofer & FD-SOI

The big piece of news to come out of Leti Days is that Leti is teaming up with Fraunhofer to “…strengthen microelectronics innovation in France and Germany” (read the press release here). The agreement was signed by Leti CEO Marie Semeria and Fraunhofer Group for Microelectronics Chairman Hubert Lakner at an official ceremony. A lively the press conference followed. Prof. Lakner emphasized that they are working on a common European roadmap, with a clear plan for collaboration on FD-SOI. Europe, he said, is a good idea, and working together, France and Germany can do a lot for industry. For FD-SOI, Leti is focused on the front-end, and Fraunhofer is working on the back-end.

Working together, they can elevate pillars like FD-SOI from the country level to the European level, noted Dr. Semeria. And that puts them in a more elevated position for EC funding initiatives such as an upcoming IPCEI – which stands for Important Project of Common European Interest.

Leti CEO Marie Semeria and Fraunhofer Group for Microelectronics Chairman Hubert Lakner announced “new collaboration to develop innovative, next-generation microelectronics technologies to spur innovation in their countries and strengthen European strategic and economic sovereignty.” (photo credit: Pierre Jayet)

Initially, however, the focus will be on extending CMOS and More-than-Moore technologies to enable next-generation components for applications in IoT, augmented reality, automotive, health, aeronautics and other sectors, as well as systems to support French and German industries. A second phase extending to other partners and countries is possible. We’ll keep you posted.

In closing, I’m sure you’ll all join me in extending hearty congratulations to Leti on their 50th anniversary. And here’s to their next 50 years of innovation – can you imagine what that might bring? It rather boggles the mind, doesn’t it?

 

ByAdele Hars

SOI Visionary Sorin Cristoloveanu Receives IEEE 2017 Andrew Grove Award

(Courtesy: Grenoble INP)

Sorin Cristoloveanu has been named the 2017 recipient of one of the IEEE’s highest honors, the Andrew Grove Award, for his “contributions to silicon-on-insulator technology and thin body devices.” An IEEE Fellow and highly regarded figure in the SOI community, Sorin is the Director of Research at the French National Center for Scientific Research (CNRS at IMEP-LAHC) in Grenoble, France.  

Here is how the IEEE describes him:

A visionary device physics researcher, Sorin Cristoloveanu saw the potential that silicon-on-insulator (SOI) technology held for the semiconductor industry in producing competitive microelectronics components with improved performance when others considered it a niche field. As early as 1976, he discovered key mechanisms of thin-body devices that have led to the development of transistors from the simplest (zero gate) to the most complicated (four gates). Among several concepts unveiled by his group, the demonstration during the 1980s that volume inversion occurs in all nano-body devices was revolutionary at the time and helped drive research that led to double-gate transistors and today’s tri-gate FinFET devices. His Pseudo-MOSFET method developed in 1992 has become an industry standard for wafer monitoring without having to actually fabricate devices. More recently, Cristoloveanu’s SOI expertise has led to innovative devices for low-power memory and sharp-switching circuits.

The Grove Award is given “for outstanding contributions to solid-state devices and technology”. In 2012, it was awarded to another SOI visionary, Jean-Pierre Colinge, “For contributions to silicon-on-insulator devices and technology.”

ByAdele Hars

EuroSOI 2017 – 3-5 April in Athens

The 2017 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) will be held April 3-5 in Athens, Greece. Although EuroSOI has been ongoing for many years, this marks the third year it joins forces with the ULIS conference. Sponsored by the IEEE and EDS, the goal is to create an interactive forum for scientists and engineers working in the field of SOI technology and advanced nanoscale devices. As such, a key objective is to promote collaboration and partnership between different academia, research and industry players in the field. For more information, visit the EuroSOI-ULIS ’17 website.

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NXP, Qualcomm, Skyworks to Keynote IoT Theme in Upcoming IEEE SOI-3D-SubVt (S3S) Conference (San Francisco, Oct.’16) – Late News Submissions Open, Advance Program Available

IEEE S3S Conference

10-13 October 2016

Hyatt Regency San Francisco Airport

IEEE SOI3DSubthreshold Microelectronics Technology Unified Conference

Theme: Energy Efficient Technology for the Internet of Things

Late News submissions open and Advance Program available

S3SconflogoThe IEEE S3S Conference brings together 3 key technologies that will play a major role in tomorrow’s industry: SOI, 3D integration, and Subthreshold Microelectronics. The numerous degrees of freedom they allow enable the ultra-low power operation and adjustable performance level mandatory for energy-starved systems, perfectly suiting the needs of the numerous categories of connected devices commonly referred to as the Internet of Things. This natural synergy was made obvious during the talks we listened to during past editions of the conference. For this reason, we adopted “Energy Efficient Technology for the Internet of Things” as the theme of the 2016 IEEE S3S.

This theme will be present throughout the conference. It will start on October 10th with a full day tutorial addressing two important IoT-related topics: Energy Efficient Computing and Communications, and will peak during the Plenary Hot Topics session, focused on the Internet of Things, on Thursday October 13th.

We have an outstanding technical program, including a very strong list of invited speakers, all of them leading authorities from illustrious organizations.

Our Keynote speakers are decision-makers from major industries:

  • Nick Yu, VP, Qualcomm, will explain why “The Homogeneous architecture is a dead fairy tale”
  • Ron Martino, VP, NXP, will present “Advanced Innovation and Requirements for future Smart, Secure and Connected Applications”
  • Peter Gammel, CTO, Skyworks, will describe “RF front end requirements and roadmaps for the IoT”

Several sessions will also be of particular interest to designers and technologists who want to learn about new knobs to implement in their circuits: Two tutorials, related to 3D technology and SOI design respectively and the technical sessions on SOI and Low Voltage Circuit Design.

Applications will be illustrated in our session dedicated to SOI circuit implementations.

ieee_logo_mb_taglineYou can look at our Advance Program to get details about the technical content of the conference, as well as the conference venue and registration.EDS-Logo-Reflex-Blue-e1435737971222

And you still have time to actively participate by submitting a late news paper before August 31st.

The conference has a long tradition of allying technical and social activities.

This will be the case again this year with several dinners & receptions that will give us plenty of opportunities to discuss with our colleagues.

Hyatt Regency San Francisco Airport

Hyatt Regency San Francisco Airport

With its broad scope of technology-related applications and social-oriented environment, the S3S is an excellent venue to meet new people with different but related research interests. It is an efficient way to shed new light on your own focus area, and to sprout new ideas and collaboration themes. It is also a place where industry and academia can exchange about the application of on-going research and tomorrow’s company needs.

Deadline for Late News submissions is

August 31st, 2016

register-now-button

For further information, please visit our website at s3sconference.org or contact the conference manager:

Joyce Lloyd • 6930 De Celis Pl., #36

Van Nuys, CA 91406

T 818.795.3768 • F 818.855.8392 • E manager@s3sconference.org

ByGianni PRATA

Shanghai & Grenoble tech dev powerhouses team up on SOI for IoT in China and global innovation ecosystem

LetiLogo MinatecLogo SITRI-LOGO-EN-2Three of the world’s More-than-Moore and SOI technology development powerhouses have signed a comprehensive agreement for ongoing collaboration and cooperation in developing new technologies for the emerging IoT market. SITRI of Shanghai, and CEA-Leti and Minatec of Grenoble will work together to accelerate the adoption of their latest technologies and create a global innovation ecosystem for emerging IoT applications (read the press release here).

The framework agreement broadly covers all joint areas of research at SITRI and Leti, including MEMS and sensors, 5G RF front ends, ultra-low power computing and communication, RF-SOI and FD-SOI.

In fact, the trio cites SOI as a key technology in the development of both Moore’s Law and “More than Moore” solutions for the IC industry, as it brings cost, performance, power and integration advantages to the areas of ICs, RF, MEMS, and communications.

“We are confident that this collaboration will be positive for China’s electronics industry, as well as for the Grenoble region’s growing SOI technology ecosystem,” said MINATEC Director Jean-Charles Guibert.

Adds Marie-Noëlle Semeria, CEO of Leti, “Through this partnership, SITRI, MINATEC, CEA-Leti and the entire ecosystem will be able to promote and extend this ecosystem to SOI partners worldwide, and provide SOI solutions to the emerging Chinese IoT market.”

“MINATEC is a world-class international innovation center that fosters a wide range of leading-edge IoT technology research and development which is home to CEA-Leti, the renowned international research institute in microelectronics,” said Charles Yang, President of SITRI. “Through this agreement and SITRI’s established platform for ‘More than Moore’ commercialization, we can accelerate the adoption of these latest technologies and create a global innovation ecosystem for emerging IoT applications.”

ByGianni PRATA

Reminder re: top SOI Conference – IEEE S3S ’16 (SOI/3D/SubVt) CFP deadline April 15th. Keynotes: NXP, Skyworks, Qualcomm

S3SconflogoDon’t forget to get your paper submitted to the top conference with a major focus on the SOI ecosystem: the IEEE S3S (SOI/3D/SubVt). The Call For Papers (CFP) deadline is April 15, 2016. As we noted for you in ASN back in December, the theme of the conference, which will take place October 10th – 13th in San Francisco, is “Energy Efficient Technology for the Internet of Things”.

As of this writing, the following keynote speakers have been confirmed:

  • Ron Martino, NXP : “Advanced Innovation and Requirements for Future Smart, Secure and Connected Applications”
  • Peter Gammel, Skyworks : “RF front end requirements and roadmaps for the IoT”
  • Nick Yu, Qualcomm : topic TBAieee_logo_mb_tagline

Invited speakers include:

  • Jamie Schaffer, GlobalFoundries : topic TBA
  • Philippe Flatresse, ST Microelectronics : “Body bias and FDSOI for Automotive”
  • Akram Salman, Texas Instruments : “ESD for advanced digital and analog technologies”
  • Xavier Garros, CEA-Leti : “Reliability of FDSOI”

As always, there will be a Best Paper Award and a Best Student Paper Award. But students take note: the recipient of the Best Student Paper will also receive $1000 from Qualcomm.

Papers related to technology, devices, circuits and applications (more details here) in the following areas are requested :

  • SOI
  • 3D Integration
  • Subthreshold MicroelectronicsEDS-Logo-Reflex-Blue-e1435737971222

For current information on the conference visit the S3S website at: http://s3sconference.org/

LinkedIn users will also want to join the conference group at IEEE SOI-3D-Subthreshold Microelectronics Technology (S3S) Unified Conference.

ByGianni PRATA

IEEE S3S, Top SOI/3D/SubVt Conference, Issues Call for Papers. Theme: Energy Efficient Tech for IoT. (Best Student Paper wins $1000)

ieee_logo_mb_taglineEDS Logo PMS3015_revu_smallThe IEEE S3S (SOI/3D/SubVt) has issued its call for papers for the 2016 conference (click here for details). The theme of the conference, which will take place October 10th – 13th in San Francisco, is “Energy Efficient Technology for the Internet of Things”. This industry-wide event gathers together widely known experts, contributed papers and invited talks focused on SOI Technology, Low-Voltage Devices/Circuits/Architectures, and 3D Integration. In addition to over 100 contributed and invited papers, the conference will feature prestigious Keynotes and a Hot Topics session.

logo_soiconsortiumFor the first time, the Conference will include two Tutorials free-of-charge with Conference registration: one on FD-SOI Circuit Design and another on Technologies for Monolithic 3D Integration. A full-day short course addresses Energy Efficient Computing and Communications including RF circuit technology.

The paper submission deadline is the 15th of April 2016. As always, there will be a Best Paper Award and a Best Student Paper Award. But for the first time, the Best Student Paper Award includes a $1,000 prize from one of the conference’s industry sponsors.

The papers presented here give industry an excellent window on what’s coming next. For example, work demonstrating a viable integration path for stacked nanowires that was first presented in a Leti paper at the 2015 S3S Conference was awarded the Paul Rappaport IEEE Prize two months later at IEDM 2015.

S3S is a great conference – don’t miss it.