From STMicroelectronics, it latest BCD process on SOI enables: • The STOD03A, a power-saving power-supply IC for ultra-thin AMOLED (Active-Matrix Organic LED) handset displays. It integrates analog, digital and closely spaced high-power circuitry on the same chip. • For advanced airbag systems, the new AIS1xxxDS family integrates a high-g acceleration MEMS sensor with an on-chip […]
STMicroelectronics’ SOI-BCD6 technology combines low-voltage CMOS logic, precise analog circuitry and robust power stages on the same ultrasound pulse controller chip. By integrating the transmit/receive switch, the STHV748 minimizes the number of external components required in applications such as stationary and portable ultrasound scanners, giving medical designers further miniaturization and cost reduction.
ST looks at a hybrid FD-SOI/bulk approach to SOCs for multimedia. The heterogeneous nature of System-on-Chip (SOC) design for the next generations of wireless, high-performance, low-power multimedia applications makes it a complex balancing act. Our research indicates that a hybrid FD-SOI/Bulk, high-k/metal-gate platform is an excellent candidate for such applications, most probably around the 22nm […]
Debiotech has developed a new generation of disposable drug delivery pumps based on SOI-MEMS. Diabetes patients will be the first beneficiaries. An SOI-based MEMS solution developed by Debiotech and manufactured by STMicroelectronics is poised to make a major impact on the lives of people suffering from diabetes and other long-term illnesses. At the heart of […]
The IEEE’s International Electron Devices Meeting (IEDM) is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here are a few highlights from some of the papers that presented advances in SOI-based devices and architectures at the most recent meeting (December 2008, San Francisco).
Leti, Soitec and ST have discovered the sources of threshold voltage variation in undoped, ultrathin FD-SOI architectures. At the most recent IEDM conference, researchers from Leti, Soitec and STMicroelectronics presented a paper entitled, “High Immunity to Threshold Voltage Variability in Undoped Ultra-Thin FDSOI MOSFETs and its Physical Understanding” (O. Weber et al, IEDM 2008).
Eight key industrial players in nanoelectronics have created the legal entity for partnering with the EC’s €3 billion Joint Technology Initiative. With the legalities now in place, the greater nanoelectronics community is set to play a significant role in defining the future of nanoelectronics R&D in Europe.