China Design Conference (April 2016) Adds RF-SOI Design Track

EDI CON China 2016, taking place April 19-21 in Beijing at the China National Convention Center (CNCC) will feature a keynote talk by GlobalFoundries‘ Peter Rabbeni, Sr. Director, RF BU Business Development & Product Marketing. The talk, entitled, “RF SOI: Revolutionizing Radio Design Today and Driving Innovation for Tomorrow”, will kick off the newly added RF-SOI […]

Great FD-SOI start for 2016: Samsung, GF, Renesas, NXP/Freescale, ST, Soitec

Just a month into 2016 and we already have a raft of FD-SOI news from Samsung, GlobalFoundries, NXP/Freescale, Renesas and more. And of course RF-SOI continues ever stronger. Here’s a quick update of what we’ve been seeing, starting with news from the recent SOI Consortium forum in Tokyo. Many of the presentations are now available on […]

VLSI Research names Soitec CEO to 2015 All Stars of the Semiconductor Industry

VLSI Research Chip Insider has named Soitec CEO Paul Boudre to its roster of 2015 All Stars of the Semiconductor Industry. (See the announcement here.) Boudre was cited for “…successfully re-organizing Soitec back to its core business as a leading innovative engineered substrate supplier. His first year results are already astounding, with very high growth […]

TowerJazz Cites Strong RF-SOI Growth as Driving force in TX Fab Acquisition

With the acquisition of Maxim’s 8-inch fab in San Antonio, Texas, TowerJazz plans to quickly qualify its core specialty technologies, including its advanced Radio-Frequency Silicon-on-Insulator (RF-SOI) offering, to serve the substantial growth in demand from its customers. (See press release here.) The proposed purchase will expand TowerJazz’s current worldwide manufacturing capacity, cost-effectively increasing production by […]

Leti Develops 22nm FD-SOI Local-strain Techniques to boost performance and lower power consumption

CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed or lower power consumption and improved performance. (For more details, read the press release here.) Targeting the 22/20nm node, the local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si […]